1. Gate-induced drain leakage current characteristics of p-type polycrystalline silicon thin film transistors aged by off-state stress. (October 2018) Authors: Park, J.; Jang, K.S.; Shin, D.G.; Shin, M.; Yi, J.S. Journal: Solid-state electronics Issue: Volume 148(2018) Page Start: 20 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗