1. Simulation study of scaled In0.53Ga0.47As and Si FinFETs for sub-16 nm technology nodes. (9th June 2016) Authors: Seoane, N; Aldegunde, M; Nagy, D; Elmessary, M A; Indalecio, G; García-Loureiro, A J; Kalna, K Journal: Semiconductor science and technology Issue: Volume 31:Number 7(2016:Jul.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗