1. Melt growth and properties of bulk BaSnO3 single crystals. (29th December 2016) Authors: Galazka, Z; Uecker, R; Irmscher, K; Klimm, D; Bertram, R; Kwasniewski, A; Naumann, M; Schewski, R; Pietsch, M; Juda, U; Fiedler, A; Albrecht, M; Ganschow, S; Markurt, T; Guguschev, C; Bickermann, M Journal: Journal of physics Issue: Volume 29:Number 7(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Effect of indium as a surfactant in (Ga1−xInx)2O3 epitaxial growth on β-Ga2O3 by metal organic vapour phase epitaxy. (19th January 2015) Authors: Baldini, M; Albrecht, M; Gogova, D; Schewski, R; Wagner, G Journal: Semiconductor science and technology Issue: Volume 30:Number 2(2015:Feb.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Impact of chamber pressure and Si-doping on the surface morphology and electrical properties of homoepitaxial (100) β-Ga2O3 thin films grown by MOVPE. (22nd October 2020) Authors: Bin Anooz, S; Grüneberg, R; Chou, T-S; Fiedler, A; Irmscher, K; Wouters, C; Schewski, R; Albrecht, M; Galazka, Z; Miller, W; Schwarzkopf, J; Popp, A Journal: Journal of physics Issue: Volume 54:Number 3(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗