1. (Invited) Probing Semiconductor Heterostructures from the Atomic to the Micrometer Scale. (8th September 2020) Authors: Koelling, Sebastian; Assali, Simone; Atalla, Mahmoud; Kumar, Aashish; Attiaoui, Anis; Lodari, Mario; Sammak, Amir; Scappucci, Giordano; Moutanabbir, Oussama Journal: ECS transactions Issue: Volume 98:Number 5(2020) Page Start: 447 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. (Invited) Very Low Temperature Epitaxy of Group-IV Semiconductors for Use in FinFET, Stacked Nanowires and Monolithic 3D Integration. (20th July 2018) Authors: Porret, Clement; Hikavyy, Andriy Yakovitch; Gomez Granados, Juan Fernando; Baudot, Sylvain; Vohra, Anurag; Kunert, Bernardette; Douhard, Bastien; Bogdanowicz, Janusz; Schaekers, Marc; Kohen, David; Margetis, Joe; Tolle, John; Lima, Lucas; Sammak, Amir; Scappucci, Giordano; Rosseel, Erik; Langer, ... Journal: ECS transactions Issue: Volume 86:Number 7(2018) Page Start: 163 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. A High‐Mobility Hole Bilayer in a Germanium Double Quantum Well. Issue 5 (25th March 2022) Authors: Tosato, Alberto; Ferrari, Beatrice; Sammak, Amir; Hamilton, Alexander R.; Veldhorst, Menno; Virgilio, Michele; Scappucci, Giordano Journal: Advanced quantum technologies Issue: Volume 5:Issue 5(2022) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Front Cover: A High‐Mobility Hole Bilayer in a Germanium Double Quantum Well (Adv. Quantum Technol. 5/2022). Issue 5 (5th May 2022) Authors: Tosato, Alberto; Ferrari, Beatrice; Sammak, Amir; Hamilton, Alexander R.; Veldhorst, Menno; Virgilio, Michele; Scappucci, Giordano Journal: Advanced quantum technologies Issue: Volume 5:Issue 5(2022) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Photoluminescence of phosphorus atomic layer doped Ge grown on Si. (1st September 2017) Authors: Yamamoto, Yuji; Nien, Li-Wei; Capellini, Giovanni; Virgilio, Michele; Costina, Ioan; Schubert, Markus Andreas; Seifert, Winfried; Srinivasan, Ashwyn; Loo, Roger; Scappucci, Giordano; Sabbagh, Diego; Hesse, Anne; Murota, Junichi; Schroeder, Thomas; Tillack, Bernd Journal: Semiconductor science and technology Issue: Volume 32:Number 10(2017:Oct.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Shallow and Undoped Germanium Quantum Wells: A Playground for Spin and Hybrid Quantum Technology. (23rd January 2019) Authors: Sammak, Amir; Sabbagh, Diego; Hendrickx, Nico W.; Lodari, Mario; Paquelet Wuetz, Brian; Tosato, Alberto; Yeoh, LaReine; Bollani, Monica; Virgilio, Michele; Schubert, Markus Andreas; Zaumseil, Peter; Capellini, Giovanni; Veldhorst, Menno; Scappucci, Giordano Journal: Advanced functional materials Issue: Volume 29:Number 14(2019) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Single-hole pump in germanium. (6th August 2021) Authors: Rossi, Alessandro; Hendrickx, Nico W; Sammak, Amir; Veldhorst, Menno; Scappucci, Giordano; Kataoka, Masaya Journal: Journal of physics Issue: Volume 54:Number 43(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Three‐Dimensional Atomic‐Scale Tomography of Buried Semiconductor Heterointerfaces. Issue 3 (1st December 2022) Authors: Koelling, Sebastian; Stehouwer, Lucas E. A.; Paquelet Wuetz, Brian; Scappucci, Giordano; Moutanabbir, Oussama Journal: Advanced materials interfaces Issue: Volume 10:Issue 3(2023) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗