1. Very Low Temperature Epitaxy of Group-IV Semiconductors for Use in FinFET, Stacked Nanowires and Monolithic 3D Integration. (12th July 2019) Authors: Porret, C.; Hikavyy, A.; Granados, J. F. Gomez; Baudot, S.; Vohra, A.; Kunert, B.; Douhard, B.; Bogdanowicz, J.; Schaekers, M.; Kohen, D.; Margetis, J.; Tolle, J.; Lima, L. P. B.; Sammak, A.; Scappucci, G.; Rosseel, E.; Langer, R.; Loo, R. Journal: ECS journal of solid state science and technology Issue: Volume 8:Number 8(2019) Page Start: P392 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Very Low Temperature Epitaxy of Group-IV Semiconductors for Use in FinFET, Stacked Nanowires and Monolithic 3D Integration. (1st January 2019) Authors: Porret, C.; Hikavyy, A.; Granados, J. F. Gomez; Baudot, S.; Vohra, A.; Kunert, B.; Douhard, B.; Bogdanowicz, J.; Schaekers, M.; Kohen, D.; Margetis, J.; Tolle, J.; Lima, L. P. B.; Sammak, A.; Scappucci, G.; Rosseel, E.; Langer, R.; Loo, R. Journal: ECS journal of solid state science and technology Issue: Volume 8:Number 8(2019) Page Start: P392 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗