1. Disorders and oxygen vacancies in p‐type Sn2B2O7 (B = Nb, Ta): Role of the B‐site element. Issue 2 (20th October 2022) Authors: Samizo, Akane; Minohara, Makoto; Kikuchi, Naoto; Ando, Kenta; Mazuka, Yuta; Nishio, Keishi Journal: Journal of the American Ceramic Society Issue: Volume 106:Issue 2(2023) Page Start: 1540 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Double Charge Polarity Switching in Sb‐Doped SnSe with Switchable Substitution Sites. (1st December 2020) Authors: Yamamoto, Chihiro; He, Xinyi; Katase, Takayoshi; Ide, Keisuke; Goto, Yosuke; Mizuguchi, Yoshikazu; Samizo, Akane; Minohara, Makoto; Ueda, Shigenori; Hiramatsu, Hidenori; Hosono, Hideo; Kamiya, Toshio Journal: Advanced functional materials Issue: Volume 31:Number 8(2021) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Effect of Crystal Structure on Hole Carrier Generation in Wide-gap P-type Tin-Niobate. (10th January 2019) Authors: Samizo, Akane; Kikuchi, Naoto; Nishio, Keishi Journal: MRS advances Issue: Volume 4:Number 1(2019) Page Start: 27 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Effect of intentional chemical doping on crystallographic and electric properties of the pyrochlore Bi2Sn2O7. (April 2022) Authors: Minohara, Makoto; Kikuchi, Naoto; Tsukuda, Kouhei; Dobashi, Yuka; Samizo, Akane; Nishio, Keishi; He, Xinyi; Katase, Takayoshi; Kamiya, Toshio; Aiura, Yoshihiro Journal: Materials & design Issue: Volume 216(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Elaboration of near‐valence band defect states leading deterioration of ambipolar operation in SnO thin‐film transistors. Issue 6 (10th November 2021) Authors: Minohara, Makoto; Asanuma, Shutaro; Asai, Hidehiro; Dobashi, Yuka; Samizo, Akane; Tezuka, Yasuhisa; Ozawa, Kenichi; Mase, Kazuhiko; Hase, Izumi; Kikuchi, Naoto; Aiura, Yoshihiro Journal: Nano select Issue: Volume 3:Issue 6(2022) Page Start: 1012 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. In-gap state generated by La-on-Sr substitutional defects within the bulk of SrTiO3. Issue 27 (19th June 2019) Authors: Aiura, Yoshihiro; Ozawa, Kenichi; Tezuka, Yasuhisa; Minohara, Makoto; Samizo, Akane; Bando, Kyoko; Kumigashira, Hiroshi; Mase, Kazuhiko Journal: Physical chemistry chemical physics Issue: Volume 21:Issue 27(2019) Page Start: 14646 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Tuning of hole carrier density in p-type α-SnWO4 by exploiting oxygen defects. Issue 24 (15th November 2022) Authors: Minohara, Makoto; Dobashi, Yuka; Kikuchi, Naoto; Samizo, Akane; Honda, Takashi; He, Xinyi; Katase, Takayoshi; Kamiya, Toshio; Nishio, Keishi; Aiura, Yoshihiro Journal: Materials advances Issue: Volume 3:Issue 24(2022) Page Start: 9111 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗