Tuning of hole carrier density in p-type α-SnWO4 by exploiting oxygen defects. Issue 24 (15th November 2022)

• Record Type: Journal Article
• Authors: Minohara, Makoto; Dobashi, Yuka; Kikuchi, Naoto; Samizo, Akane; Honda, Takashi; He, Xinyi; Katase, Takayoshi; Kamiya, Toshio; Nishio, Keishi; Aiura, Yoshihiro
• Is Part Of: Materials advances. Volume 3:Issue 24(2022)
• Page Start: 9111
• Page End: 9116
• Publication Date: 2022-11-15
• Subjects: 620.11
• DOI: 10.1039/d2ma00815g
• Languages: English
• ISSNs: 2633-5409

Abstract

Abstract : We demonstrate that hole carrier density of α-SnWO4 can be tuned by controlling the annealing process. Hole carrier density increased by two orders of magnitude and achieved a value close to 10 19 cm −3 at an optimum O2 gas concentration. Abstract : The development of p-type oxide semiconductors has shown promise in overcoming limitations restricting the practical usage of oxide semiconductors and the realization of innovative functional devices. Through numerous studies based on both experimental and theoretical approaches, several state-of-the-art p-type oxide semiconductors have been discovered. However, one of the challenges concerning these p-type oxide semiconductors is on tuning the hole carrier density. In this study, precise tuning of the hole carrier density in α-SnWO4 based on thermodynamic condition control was demonstrated. A detailed investigation of the crystal structure via X-ray diffraction, extended X-ray absorption fine structures, and density functional theory calculations revealed the role of oxygen defects, such as oxygen vacancies and interstitials, in tuning the hole carrier density. This study shows the importance of fine-tuning of oxygen defects based on thermodynamic condition control for the emergence and improvement of p-type semiconducting properties in Sn 2+ -based oxides.