1. Impact of High-K and Gate-to-Drain Spacing in InGaAs/InAs/InGaAs-based DG-MOS-HEMT for Low-leakage and High-frequency Applications. Issue 3 (3rd April 2023) Authors: Baskaran, S.; Saravana Kumar, R.; Saminathan, V.; Poornachandran, R.; Mohan Kumar, N.; Janakiraman, V. Journal: IETE journal of research Issue: Volume 69:Issue 3(2023) Page Start: 1222 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗