1. Dopant profiling in silicon nanowires measured by scanning capacitance microscopy. Issue 4 (17th March 2014) Authors: Bassani, Franck; Periwal, Priyanka; Salem, Bassem; Chevalier, Nicolas; Mariolle, Denis; Audoit, Guillaume; Gentile, Pascal; Baron, Thierry Journal: Physica status solidi Issue: Volume 8:Issue 4(2014:Apr.) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Enhancing the incorporation of Sn in vapor–liquid–solid GeSn nanowires by modulation of the droplet composition. (11th June 2022) Authors: Zeghouane, Mohammed; Hijazi, Hadi; Bassani, Franck; Lefevre, Gauthier; Martinez, Eugenie; Luciani, Thierry; Gentile, Pascal; Dubrovskii, Vladimir G; Salem, Bassem Journal: Nanotechnology Issue: Volume 33:Number 24(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. First evidence of superiority of Si nanonet field effect transistors over multi-parallel Si nanowire ones in view of electrical DNA hybridization detection. (3rd October 2018) Authors: Nguyen, Thi Thu Thuy; Legallais, Maxime; Morisot, Fanny; Cazimajou, Thibauld; Stambouli, Valérie; Mouis, Mireille; Salem, Bassem; Ternon, Céline Journal: Materials research express Issue: Volume 6:Number 1(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Formation mechanisms of ZnO nanowires on polycrystalline Au seed layers for piezoelectric applications. (29th May 2019) Authors: Lausecker, Clément; Salem, Bassem; Baillin, Xavier; Roussel, Hervé; Sarigiannidou, Eirini; Bassani, Franck; Appert, Estelle; Labau, Sébastien; Consonni, Vincent Journal: Nanotechnology Issue: Volume 30:Number 34(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Growth of Ge1−xSnx Nanowires by Chemical Vapor Deposition via Vapor–Liquid–Solid Mechanism Using GeH4 and SnCl4. Issue 1 (22nd November 2017) Authors: Haffner, Thibault; Zeghouane, Mohammed; Bassani, Franck; Gentile, Pascal; Gassenq, Alban; Chouchane, Fares; Pauc, Nicolas; Martinez, Eugenie; Robin, Eric; David, Sylvain; Baron, Thierry; Salem, Bassem Journal: Physica status solidi Issue: Volume 215:Issue 1(2018) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Impact of Substrate Biasing During AlN Growth by PEALD on Al2O3/AlN/GaN MOS Capacitors. Issue 5 (28th December 2021) Authors: Legallais, Maxime; Lefevre, Gauthier; Martin, Simon; Labau, Sébastien; Bassani, Franck; Pélissier, Bernard; Baron, Thierry; Vauche, Laura; Le Royer, Cyrille; Charles, Matthew; Vandendaele, William; Plissonnier, Marc; Gwoziecki, Romain; Salem, Bassem Journal: Advanced materials interfaces Issue: Volume 9:Issue 5(2022) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Impact of the wetting layer thickness on the emission wavelength of direct band gap GeSn/Ge quantum dots. (19th July 2017) Authors: Ilahi, Bouraoui; Al-Saigh, Reem; Salem, Bassem Journal: Materials research express Issue: Volume 4:Number 7(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Monolithic fabrication of nano-to-millimeter scale integrated transistors based on transparent and flexible silicon nanonets. Issue 2 (18th June 2019) Authors: Nguyen, Thi Thu Thuy; Cazimajou, Thibauld; Legallais, Maxime; Arjmand, Tabassom; Nguyen, Viet Huong; Mouis, Mireille; Salem, Bassem; Robin, Eric; Ternon, C Journal: Nano futures Issue: Volume 3:Issue 2(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Tuneable polarity and enhanced piezoelectric response of ZnO thin films grown by metal–organic chemical vapour deposition through the flow rate adjustment. Issue 1 (22nd November 2021) Authors: Bui, Quang Chieu; Ardila, Gustavo; Roussel, Hervé; Jiménez, Carmen; Gélard, Isabelle; Chaix-Pluchery, Odette; Mescot, Xavier; Boubenia, Sarah; Salem, Bassem; Consonni, Vincent Journal: Materials advances Issue: Volume 3:Issue 1(2022) Page Start: 498 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Tuning direct bandgap GeSn/Ge quantum dots' interband and intraband useful emission wavelength: Towards CMOS compatible infrared optical devices. (May 2018) Authors: Baira, Mourad; Salem, Bassem; Madhar, Niyaz Ahamad; Ilahi, Bouraoui Journal: Superlattices and microstructures Issue: Volume 117(2018) Page Start: 31 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗