First evidence of superiority of Si nanonet field effect transistors over multi-parallel Si nanowire ones in view of electrical DNA hybridization detection. (3rd October 2018)

• Record Type: Journal Article
• Authors: Nguyen, Thi Thu Thuy; Legallais, Maxime; Morisot, Fanny; Cazimajou, Thibauld; Stambouli, Valérie; Mouis, Mireille; Salem, Bassem; Ternon, Céline
• Is Part Of: Materials research express. Volume 6:Number 1(2019)
• Publication Date: 2018-10-03
• Subjects: silicon nanowire -- silicon nanonet -- field-effect transistors -- electrical characterizations -- DNA detection -- GOPS functionalization -- semiconducting nanowire network; Materials science -- Research -- Periodicals; Materials science -- Periodicals; 620.11
• DOI: 10.1088/2053-1591/aae0d5
• Languages: English
• ISSNs: 2053-1591

Abstract

Abstract: Si nanonets (SiNN, networks of randomly oriented Si nanowires) and multi-parallel silicon nanowires (MP-SiNW) were integrated into field effect transistor using standard and low cost microelectronic technologies. The SiNN field effect transistors exhibit high initial ON-state current (in the range of 10 –7 A), ION /IOFF ratio up to 10 4 and rather homogeneous transfer characteristics. In contrast, the MP-SiNW ones present smaller modulation between ON and OFF currents, higher IOFF and more scattered electrical characteristics. In view of DNA hybridization detection, a simple and eco-friendly functionalization process with glycidyloxypropyltrimethoxysilane (GOPS) was used to covalently graft single strand DNA probes on both SiNN and MP-SiNW devices. Validated by fluorescence measurement, DNA hybridization leads to a systematic decrease of ON-state current of SiNN devices. In addition, SiNN-based sensors exhibit more homogeneous and reproducible current variation in response to DNA hybridization step as compared to MP-SiNW configuration. This result highlights the better sensing performances of SiNN FETs as compared to MP-SiNW ones and emphasizes the SiNN potential for label-free detection of DNA.