1. Annealing effects on resistive switching of IGZO-based CBRAM devices. (October 2020) Authors: Gan, Kai-Jhih; Liu, Po-Tsun; Ruan, Dun-Bao; Chiu, Yu-Chuan; Sze, Simon M. Journal: Vacuum Issue: Volume 180(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Bipolar resistive switching characteristics of tungsten-doped indium–zinc oxide conductive-bridging random access memory. (August 2019) Authors: Gan, Kai-Jhih; Liu, Po-Tsun; Lin, Sheng-Jie; Ruan, Dun-Bao; Chien, Ta-Chun; Chiu, Yu-Chuan; Sze, Simon M. Journal: Vacuum Issue: Volume 166(2019) Page Start: 226 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Effect of tungsten doping on the variability of InZnO conductive-bridging random access memory. (22nd October 2020) Authors: Gan, Kai-Jhih; Liu, Po-Tsun; Ruan, Dun-Bao; Hsu, Chih-Chieh; Chiu, Yu-Chuan; Sze, Simon M Journal: Nanotechnology Issue: Volume 32:Number 3(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Effect of tungsten doping on the variability of InZnO conductive-bridging random access memory. (22nd October 2020) Authors: Gan, Kai-Jhih; Liu, Po-Tsun; Ruan, Dun-Bao; Hsu, Chih-Chieh; Chiu, Yu-Chuan; Sze, Simon M Journal: Nanotechnology Issue: Volume 32:Number 3(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Impact of annealing environment on performance of InWZnO conductive bridge random access memory. (September 2021) Authors: Hsu, Chih-Chieh; Liu, Po-Tsun; Gan, Kai-Jhih; Ruan, Dun-Bao; Chiu, Yu-Chuan; Sze, Simon M. Journal: Vacuum Issue: Volume 191(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Improved electrical characteristics of Ge nMOSFET with suitable nitrogen content in starting interfacial layer. (November 2020) Authors: Ruan, Dun-Bao; Chang-Liao, Kuei-Shu; Hsu, Wen-Yen; Yi, Shih-Han Journal: Vacuum Issue: Volume 181(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Investigation of deposition technique and thickness effect of HfO2 film in bilayer InWZnO-based conductive bridge random access memory. (July 2022) Authors: Hsu, Chih-Chieh; Liu, Po-Tsun; Gan, Kai-Jhih; Ruan, Dun-Bao; Sze, Simon M. Journal: Vacuum Issue: Volume 201(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Low EOT and oxide traps for p-substrate Ge MOS device with hafnium nitride interfacial layer. (September 2020) Authors: Ruan, Dun-Bao; Chang-Liao, Kuei-Shu; Hsu, Wen-Yen; Yi, Shih-Han; Lee, Yao-Jen Journal: Vacuum Issue: Volume 179(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Mobility enhancement for high stability tungsten-doped indium-zinc oxide thin film transistors with a channel passivation layer. Issue 13 (12th February 2018) Authors: Ruan, Dun-Bao; Liu, Po-Tsun; Chiu, Yu-Chuan; Kuo, Po-Yi; Yu, Min-Chin; Gan, Kai-jhih; Chien, Ta-Chun; Sze, Simon M. Journal: RSC advances Issue: Volume 8:Issue 13(2018) Page Start: 6925 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗