1. A versatile low-resistance ohmic contact process with ohmic recess and low-temperature annealing for GaN HEMTs. (21st August 2018) Authors: Lin, Yen-Ku; Bergsten, Johan; Leong, Hector; Malmros, Anna; Chen, Jr-Tai; Chen, Ding-Yuan; Kordina, Olof; Zirath, Herbert; Chang, Edward Yi; Rorsman, Niklas Journal: Semiconductor science and technology Issue: Volume 33:Number 9(2018:Sep.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Carbon-Doped GaN on SiC Materials for Low-Memory-Effect Devices. (23rd August 2016) Authors: Chen, Jr-Tai; Janzén, Erik; Rorsman, Niklas; Thorsell, Mattias; Andersson, Mats; Kordina, Olof Journal: ECS transactions Issue: Volume 75:Number 12(2016) Page Start: 61 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Evaluation of an InAlN/AlN/GaN HEMT with Ta‐based ohmic contacts and PECVD SiN passivation. Issue 3 (22nd January 2014) Authors: Malmros, Anna; Gamarra, Piero; Thorsell, Mattias; Forte‐Poisson, Marie‐Antoinette di; Lacam, Cedric; Tordjman, Maurice; Aubry, Raphaël; Zirath, Herbert; Rorsman, Niklas Other Names: Eddy, Jr. Charles R. "Chip" sponsoringEditor.; Kuball Martin sponsoringEditor.; Koleske Daniel D. sponsoringEditor.; Amano Hiroshi sponsoringEditor. Journal: Physica status solidi Issue: Volume 11:Issue 3/4(2014:Apr.) Page Start: 924 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. GaN High‐Electron‐Mobility Transistors with Superconducting Nb Gates for Low‐Noise Cryogenic Applications. Issue 8 (17th November 2022) Authors: Mebarki, Mohamed Aniss; Ferrand-Drake Del Castillo, Ragnar; Pavolotsky, Alexey; Meledin, Denis; Sundin, Erik; Thorsell, Mattias; Rorsman, Niklas; Belitsky, Victor; Desmaris, Vincent Other Names: Xing Grace guestEditor.; Mi Zetian guestEditor.; Chowdhury Srabanti guestEditor. Journal: Physica status solidi Issue: Volume 220:Issue 8(2023) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Generic Graphene Based Components and Circuits for Millimeter Wave High Data-rate Communication Systems. (19th June 2017) Authors: Habibpour, Omid; Strupinski, Wlodzimierz; Rorsman, Niklas; Ciepielewski, Pawel; Zirath, Herbert Journal: MRS advances Issue: Volume 2:Number 58/59(2017) Page Start: 3559 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Impact of in situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance. (1st March 2022) Authors: Chen, Ding-Yuan; Persson, Axel R; Wen, Kai-Hsin; Sommer, Daniel; Grünenpütt, Jan; Blanck, Hervé; Thorsell, Mattias; Kordina, Olof; Darakchieva, Vanya; Persson, Per O Å; Chen, Jr-Tai; Rorsman, Niklas Journal: Semiconductor science and technology Issue: Volume 37:Number 3(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Impact of in situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance. (25th January 2022) Authors: Chen, Ding-Yuan; Persson, Axel R; Wen, Kai-Hsin; Sommer, Daniel; Grünenpütt, Jan; Blanck, Hervé; Thorsell, Mattias; Kordina, Olof; Darakchieva, Vanya; Persson, Per O Å; Chen, Jr-Tai; Rorsman, Niklas Journal: Semiconductor science and technology Issue: Volume 37:Number 3(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Investigation of Isolation Approaches and the Stoichiometry of SiNx Passivation Layers in "Buffer‐Free" AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors. Issue 8 (11th December 2022) Authors: Hult, Björn; Thorsell, Mattias; Chen, Jr-Tai; Rorsman, Niklas Other Names: Xing Grace guestEditor.; Mi Zetian guestEditor.; Chowdhury Srabanti guestEditor. Journal: Physica status solidi Issue: Volume 220:Issue 8(2023) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Investigation of Multiple-Mesa-Nanochannel Array GaN-Based MOSHEMTs with Al2O3 Gate Dielectric Layer. (28th May 2021) Authors: Jian, Jhang-Jie; Lee, Hsin-Ying; Chang, Edward Yi; Rorsman, Niklas; Lee, Ching-Ting Journal: ECS journal of solid state science and technology Issue: Volume 10:Number 5(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗