1. Contact resistivities of antimony-doped n-type Ge1−xSnx. (23rd June 2016) Authors: Srinivasan, V S Senthil; Fischer, Inga A; Augel, Lion; Hornung, Anja; Koerner, Roman; Kostecki, Konrad; Oehme, Michael; Rolseth, Erlend; Schulze, Joerg Journal: Semiconductor science and technology Issue: Volume 31:Number 8(2016:Aug.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors. (August 2015) Authors: Schulze, Jörg; Blech, Andreas; Datta, Arnab; Fischer, Inga A.; Hähnel, Daniel; Naasz, Sandra; Rolseth, Erlend; Tropper, Eva-Maria Journal: Solid-state electronics Issue: Volume 110(2015) Page Start: 59 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗