1. A new explicit and analytical model for square Gate-All-Around MOSFETs with rounded corners. (September 2015) Authors: Moreno, E.; Villada, M.P.; Ruiz, F.G.; Roldán, J.B.; Marin, E.G. Journal: Solid-state electronics Issue: Volume 111(2015) Page Start: 180 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. A new explicit and analytical model for square Gate-All-Around MOSFETs with rounded corners. (September 2015) Authors: Moreno, E.; Villada, M.P.; Ruiz, F.G.; Roldán, J.B.; Marin, E.G. Journal: Solid-state electronics Issue: Volume 111(2015) Page Start: 180 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. A new parameter to characterize the charge transport regime in Ni/HfO2/Si-n+-based RRAMs. (April 2016) Authors: Villena, M.A.; Roldán, J.B.; González, M.B.; González-Rodelas, P.; Jiménez-Molinos, F.; Campabadal, F.; Barrera, D. Journal: Solid-state electronics Issue: Volume 118(2016) Page Start: 56 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. A new parameter to characterize the charge transport regime in Ni/HfO2/Si-n+-based RRAMs. (April 2016) Authors: Villena, M.A.; Roldán, J.B.; González, M.B.; González-Rodelas, P.; Jiménez-Molinos, F.; Campabadal, F.; Barrera, D. Journal: Solid-state electronics Issue: Volume 118(2016) Page Start: 56 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. An experimental and simulation study of the role of thermal effects on variability in TiN/Ti/HfO2/W resistive switching nonlinear devices. (July 2022) Authors: Maldonado, D.; Aguilera-Pedregosa, C.; Vinuesa, G.; García, H.; Dueñas, S.; Castán, H.; Aldana, S.; González, M.B.; Moreno, E.; Jiménez-Molinos, F.; Campabadal, F.; Roldán, J.B. Journal: Chaos, solitons and fractals Issue: Volume 160(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. An in-depth study of thermal effects in reset transitions in HfO2 based RRAMs. (September 2015) Authors: Villena, M.A.; González, M.B.; Roldán, J.B.; Campabadal, F.; Jiménez-Molinos, F.; Gómez-Campos, F.M.; Suñé, J. Journal: Solid-state electronics Issue: Volume 111(2015) Page Start: 47 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. An in-depth study of thermal effects in reset transitions in HfO2 based RRAMs. (September 2015) Authors: Villena, M.A.; González, M.B.; Roldán, J.B.; Campabadal, F.; Jiménez-Molinos, F.; Gómez-Campos, F.M.; Suñé, J. Journal: Solid-state electronics Issue: Volume 111(2015) Page Start: 47 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Analysis of resistive switching processes in TiN/Ti/HfO2/W devices to mimic electronic synapses in neuromorphic circuits. (July 2019) Authors: González-Cordero, G.; Pedro, M.; Martin-Martinez, J.; González, M.B.; Jiménez-Molinos, F.; Campabadal, F.; Nafría, N.; Roldán, J.B. Journal: Solid-state electronics Issue: Volume 157(2019) Page Start: 25 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. DC self-heating effects modelling in SOI and bulk FinFETs. Issue 4 (April 2015) Authors: González, B.; Roldán, J.B.; Iñiguez, B.; Lázaro, A.; Cerdeira, A. Journal: Microelectronics journal Issue: Volume 46:Issue 4(2015) Page Start: 320 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Influence of variability on the performance of HfO2 memristor-based convolutional neural networks. (November 2021) Authors: Romero-Zaliz, R.; Pérez, E.; Jiménez-Molinos, F.; Wenger, C.; Roldán, J.B. Journal: Solid-state electronics Issue: Volume 185(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗