Author/Creator: Rohatgi, Ajeet - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Rohatgi, Ajeet

1. 20.7% efficient ion‐implanted large area n‐type front junction silicon solar cells with rear point contacts formed by laser opening and physical vapor deposition. (31st July 2014)

Authors:: Tao, Yuguo; Payne, Adam; Upadhyaya, Vijaykumar D.; Rohatgi, Ajeet
Journal:: Progress in photovoltaics
Issue:: Volume 22:Number 10(2014)
Page Start:: 1030
Record Type:: Journal Article
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2. Analysis of the negative charges injected into a SiO2/SiNx stack using plasma charging technology for field‐effect passivation on a boron‐doped silicon surface. (4th October 2020)

Authors:: Min, Kwan Hong; Hwang, Jeong‐Mo; Cho, Eunwan; Song, Hee‐eun; Park, Sungeun; Rohatgi, Ajeet; Kim, Donghwan; Lee, Hae‐Seok; Kang, Yoonmook; Ok, Young‐Woo; Kang, Min Gu
Journal:: Progress in photovoltaics
Issue:: Volume 29:Number 1(2021)
Page Start:: 54
Record Type:: Journal Article
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3. Development of high‐efficiency large‐area screen‐printed solar cells on direct kerfless epitaxially grown monocrystalline Si wafer and structure. (20th April 2016)

Authors:: Chen, Chia‐Wei; Hao, Ruiying; Upadhyaya, Vijaykumar D.; Ravi, T. S.; Rohatgi, Ajeet
Journal:: Progress in photovoltaics
Issue:: Volume 24:Number 8(2016)
Page Start:: 1133
Record Type:: Journal Article
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4. Effect of carbon containing SiNx antireflection coating on the screen‐printed contact and low illumination performance of silicon solar cell1. (2nd November 2011)

Authors:: Kang, Moon Hee; Rohatgi, Ajeet; Hong, Junegie; Rounsaville, Brian; Upadhyaya, Vijaykumar; Ebong, Abasifreke; Das, Arnab
Journal:: Progress in photovoltaics
Issue:: Volume 21:Number 3(2013)
Page Start:: 351
Record Type:: Journal Article
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5. High efficiency large area n‐type front junction silicon solar cells with boron emitter formed by screen printing technology. (13th April 2014)

Authors:: Ryu, Kyungsun; Upadhyaya, Ajay; Upadhyaya, Vijaykumar; Rohatgi, Ajeet; Ok, Young‐Woo
Journal:: Progress in photovoltaics
Issue:: Volume 23:Number 1(2015)
Page Start:: 119
Record Type:: Journal Article
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6. Hole-selective molybdenum oxide as a full-area rear contact to crystalline p-type Si solar cells. (10th July 2017)

Authors:: Yoon, Woojun; Moore, James E; Cho, Eunhwan; Scheiman, David; Kotulak, Nicole A; Cleveland, Erin; Ok, Young-Woo; Jenkins, Phillip P.; Rohatgi, Ajeet; Walters, Robert J.
Journal:: Japanese journal of applied physics
Issue:: Volume 56:Number 8(2017)Supplement 2
Page Start:
Record Type:: Journal Article
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7. Large area tunnel oxide passivated rear contact n‐type Si solar cells with 21.2% efficiency. (21st January 2016)

Authors:: Tao, Yuguo; Upadhyaya, Vijaykumar; Chen, Chia‐Wei; Payne, Adam; Chang, Elizabeth Lori; Upadhyaya, Ajay; Rohatgi, Ajeet
Journal:: Progress in photovoltaics
Issue:: Volume 24:Number 6(2016)
Page Start:: 830
Record Type:: Journal Article
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8. Modeling the potential of screen printed front junction CZ silicon solar cell with tunnel oxide passivated back contact. (4th October 2016)

Authors:: Chen, Chia‐Wei; Hermle, Martin; Benick, Jan; Tao, Yuguo; Ok, Young‐Woo; Upadhyaya, Ajay; Tam, Andrew M.; Rohatgi, Ajeet
Journal:: Progress in photovoltaics
Issue:: Volume 25:Number 1(2017)
Page Start:: 49
Record Type:: Journal Article
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9. Optimization of ultraviolet laser doping for crystalline silicon solar cells with a novel segmented selective emitter design. (14th December 2012)

Authors:: Renshaw, John S.; Upadhyaya, Ajay; Upadhyaya, Vijaykumar; Cooper, Ian B.; Rohatgi, Ajeet
Journal:: Progress in photovoltaics
Issue:: Volume 21:Number 2(2013)
Page Start:: 141
Record Type:: Journal Article
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10. Process development and comparison of various boron emitter technologies for high‐efficiency (~21%) n‐type silicon solar cells. (13th April 2016)

Authors:: Ryu, Kyungsun; Cho, Eunhwan; Rohatgi, Ajeet; Ok, Young‐Woo
Journal:: Progress in photovoltaics
Issue:: Volume 24:Number 8(2016)
Page Start:: 1109
Record Type:: Journal Article
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