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Author/Creator Robin, Eric

12. Improvement of critical temperature of niobium nitride deposited on 8-inch silicon wafers thanks to an AlN buffer layer. (23rd February 2021)

Authors:
Rhazi, Raouia; Machhadani, Houssaine; Bougerol, Catherine; Lequien, Stéphane; Robin, Eric; Rodriguez, Guillaume; Souil, Richard; Thomassin, Jean-Luc; Mollard, Nicolas; Désières, Yohan; Monroy, Eva; Olivier, Ségolène; Gérard, Jean-Michel
Journal:
Superconductor science & technology
Issue:
Volume 34:Number 4(2021)
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Record Type:
Journal Article
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13. Monolithic fabrication of nano-to-millimeter scale integrated transistors based on transparent and flexible silicon nanonets. Issue 2 (18th June 2019)

Authors:
Nguyen, Thi Thu Thuy; Cazimajou, Thibauld; Legallais, Maxime; Arjmand, Tabassom; Nguyen, Viet Huong; Mouis, Mireille; Salem, Bassem; Robin, Eric; Ternon, C
Journal:
Nano futures
Issue:
Volume 3:Issue 2(2019)
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Record Type:
Journal Article
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16. The role of surface diffusion in the growth mechanism of III-nitride nanowires and nanotubes. (2nd December 2020)

Authors:
Daudin, Bruno; Siladie, Alexandra-Madalina; Gruart, Marion; den Hertog, Martien; Bougerol, Catherine; Haas, Benedikt; Rouvière, Jean-Luc; Robin, Eric; Recio-Carretero, Maria-José; Garro, Núria; Cros, Ana
Journal:
Nanotechnology
Issue:
Volume 32:Number 8(2021)
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Record Type:
Journal Article
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