1. Dislocation-free axial InAs-on-GaAs nanowires on silicon. (14th August 2017) Authors: Beznasyuk, Daria V; Robin, Eric; Hertog, Martien Den; Claudon, Julien; Hocevar, Moïra Journal: Nanotechnology Issue: Volume 28:Number 36(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Monolithic fabrication of nano-to-millimeter scale integrated transistors based on transparent and flexible silicon nanonets. Issue 2 (18th June 2019) Authors: Nguyen, Thi Thu Thuy; Cazimajou, Thibauld; Legallais, Maxime; Arjmand, Tabassom; Nguyen, Viet Huong; Mouis, Mireille; Salem, Bassem; Robin, Eric; Ternon, C Journal: Nano futures Issue: Volume 3:Issue 2(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Calorimetric analysis of Portevin-Le Chatelier bands under equibiaxial loading conditions in Al–Mg alloys: Kinematics and mechanical dissipation. (February 2017) Authors: Le Cam, Jean-Benoît; Robin, Eric; Leotoing, Lionel; Guines, Dominique Journal: Mechanics of materials Issue: Volume 105(2017:Feb.) Page Start: 80 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Al–Ge–Al Nanowire Heterostructure: From Single‐Hole Quantum Dot to Josephson Effect. Issue 39 (8th August 2021) Authors: Delaforce, Jovian; Sistani, Masiar; Kramer, Roman B. G.; Luong, Minh A.; Roch, Nicolas; Weber, Walter M.; den Hertog, Martien I.; Robin, Eric; Naud, Cecile; Lugstein, Alois; Buisson, Olivier Journal: Advanced materials Issue: Volume 33:Issue 39(2021) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Growth mechanism of InGaN nano-umbrellas. (11th October 2016) Authors: Zhang, Xin; Haas, Benedikt; Rouvière, Jean-Luc; Robin, Eric; Daudin, Bruno Journal: Nanotechnology Issue: Volume 27:Number 45(2016) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Identifying hyperelastic constitutive parameters with sensitivity‐based virtual fields. (3rd August 2021) Authors: Tayeb, Adel; Le Cam, Jean Benoît; Grédiac, Michel; Toussaint, Evelyne; Robin, Eric; Balandraud, Xavier; Canévet, Frédéric Journal: Strain Issue: Volume 57:Number 6(2021) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Combining Atomic-Scale EDX with Inelastic Multislice Simulations for Quantitative Chemical Analysis of AlGaN/GaN 1 nm-thick Quantum Wells. (August 2022) Authors: Castioni, Florian; Cuesta, Sergi; Bernier, Nicolas; Quéméré, Patrick; Robin, Eric; Delaye, Vincent; Monroy, Eva; Bayle-Guillemaud, Pascale Journal: Microscopy and microanalysis Issue: Volume 28(2022)Supplement 1 Page Start: 2564 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. SiGe Bandgap Tuning for High Speed Eam. (27th April 2017) Authors: Mastronardi, Lorenzo; Banakar, Mehdi; Khokhar, Ali Z.; Domínguez Bucio, Thalía; Littlejohns, Callum G; Bernier, Nicolas; Robin, Eric; Rouviere, Jean-Ruc; Dansas, Hugo; Gambacorti, Narciso; Mashanovich, Goran Z.; Gardes, Frederic Y. Journal: ECS transactions Issue: Volume 77:Number 6(2017) Page Start: 59 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Dual‐Color Emission from Monolithic m‐Plane Core–Shell InGaN/GaN Quantum Wells. Issue 6 (30th March 2021) Authors: Kapoor, Akanksha; Grenier, Vincent; Robin, Eric; Bougerol, Catherine; Jacopin, Gwénolé; Gayral, Bruno; Tchernycheva, Maria; Eymery, Joël; Durand, Christophe Journal: Advanced photonics research Issue: Volume 2:Issue 6(2021) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Improvement of critical temperature of niobium nitride deposited on 8-inch silicon wafers thanks to an AlN buffer layer. (23rd February 2021) Authors: Rhazi, Raouia; Machhadani, Houssaine; Bougerol, Catherine; Lequien, Stéphane; Robin, Eric; Rodriguez, Guillaume; Souil, Richard; Thomassin, Jean-Luc; Mollard, Nicolas; Désières, Yohan; Monroy, Eva; Olivier, Ségolène; Gérard, Jean-Michel Journal: Superconductor science & technology Issue: Volume 34:Number 4(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗