Author/Creator: Remesh, Nayana - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Remesh, Nayana

1. A Novel Technique to Investigate the Role of Traps in the Off‐State Performance of AlGaN/GaN High Electron Mobility Transistor on Si Using Substrate Bias. Issue 7 (29th December 2019)

Authors:: Remesh, Nayana; Kumar, Sandeep; Guiney, Ivor; Humphreys, Colin J.; Raghavan, Srinivasan; Muralidharan, Rangarajan; Nath, Digbijoy N.
Other Names:: Shahedipour-Sandvik F. Shadi guestEditor.; Qhalid Fareed guestEditor.
Journal:: Physica status solidi
Issue:: Volume 217:Issue 7(2020)
Page Start:: n/a
Record Type:: Journal Article
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2. An artificial synaptic transistor using an α-In2Se3 van der Waals ferroelectric channel for pattern recognition. Issue 58 (17th November 2021)

Authors:: Mohta, Neha; Rao, Ankit; Remesh, Nayana; Muralidharan, R.; Nath, Digbijoy N.
Journal:: RSC advances
Issue:: Volume 11:Issue 58(2021)
Page Start:: 36901
Record Type:: Journal Article
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3. Interface traps at Al2O3/InAlN/GaN MOS-HEMT -on- 200 mm Si. (November 2017)

Authors:: Kumar, Sandeep; Remesh, Nayana; Dolmanan, S.B.; Tripathy, S.; Raghavan, S.; Muralidharan, R.; Nath, Digbijoy N.
Journal:: Solid-state electronics
Issue:: Volume 137(2017)
Page Start:: 117
Record Type:: Journal Article
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4. Nitrogen rich PECVD silicon nitride for passivation of Si and AlGaN/GaN HEMT devices. (December 2021)

Authors:: Subhani, Khawaja Nizammuddin; Remesh, Nayana; S, Niranjan; Raghavan, Srinivasan; R, Muralidharan; Nath, Digbijoy N.; Bhat, K.N.
Journal:: Solid-state electronics
Issue:: Volume 186(2021)
Page Start:
Record Type:: Journal Article
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