A Novel Technique to Investigate the Role of Traps in the Off‐State Performance of AlGaN/GaN High Electron Mobility Transistor on Si Using Substrate Bias. Issue 7 (29th December 2019)

• Record Type: Journal Article
• Authors: Remesh, Nayana; Kumar, Sandeep; Guiney, Ivor; Humphreys, Colin J.; Raghavan, Srinivasan; Muralidharan, Rangarajan; Nath, Digbijoy N.
• Other Names: Shahedipour-Sandvik F. Shadi guestEditor.; Qhalid Fareed guestEditor.
• Is Part Of: Physica status solidi. Volume 217:Issue 7(2020)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-12-29
• Subjects: AlGaN -- high electron mobility transistors -- substrate sweeping -- thermionic; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201900794
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : Leakage mediated by GaN buffer traps is identified and studied using a novel characterization technique. Through back‐gating measurement, the effect of buffer trap states on the lateral leakage is determined by probing mesa‐isolated Ohmic pads. Time‐dependent leakage measurements are carried out to study the extent of the increase in buffer leakage due to the traps. It is observed that the mesa leakage is more prominent at very slow sweep rates and high substrate bias. The temperature‐dependent measurements show that the mesa leakage and the substrate leakage are characterized by thermionic emission from the traps with an activation barrier of 0.34 and 0.2 eV, respectively. Abstract : A novel characterization technique to study trap mediated the buffer leakage in GaN layer is reported. Through back gating measurement, effect of buffer trap states on the lateral leakage is determined by probing mesa isolated Ohmic pads. The temperature‐dependent leakage measurements carried out on the samples revealed that the leakage is predominantly due to thermionic emission from the buffer traps.