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Author/Creator Rampazzo, Fabiana

1. Failure Physics and Reliability of GaN‐Based HEMTs for Microwave and Millimeter‐Wave Applications: A Review of Consolidated Data and Recent Results. Issue 24 (19th November 2022)

Authors:
Zanoni, Enrico; Rampazzo, Fabiana; De Santi, Carlo; Gao, Zhan; Sharma, Chandan; Modolo, Nicola; Verzellesi, Giovanni; Chini, Alessandro; Meneghesso, Gaudenzio; Meneghini, Matteo
Journal:
Physica status solidi
Issue:
Volume 219:Issue 24(2022)
Page Start:
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Record Type:
Journal Article
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2. Impact of an AlGaN spike in the buffer in 0.15 μm AlGaN/GaN HEMTs during step stress. (November 2021)

Authors:
Gao, Zhan; Rampazzo, Fabiana; Meneghini, Matteo; Modolo, Nicola; De Santi, Carlo; Blanck, Hervé; Stieglauer, Hermann; Sommer, Daniel; Grünenpütt, Jan; Kordina, Olof; Chen, Jr-Tai; Jacquet, J-C; Lacam, C.; Piotrowicz, S.; Meneghesso, Gaudenzio; Zanoni, Enrico
Journal:
Microelectronics and reliability
Issue:
Volume 126(2021)
Page Start:
Record Type:
Journal Article
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3. Short term reliability and robustness of ultra-thin barrier, 110 nm-gate AlN/GaN HEMTs. (August 2021)

Authors:
Gao, ZHan; Meneghini, Matteo; Harrouche, Kathia; Kabouche, Riad; Chiocchetta, Francesca; Okada, Etienne; Rampazzo, Fabiana; De Santi, Carlo; Medjdoub, Farid; Meneghesso, Gaudenzio; Zanoni, Enrico
Journal:
Microelectronics and reliability
Issue:
Volume 123(2021)
Page Start:
Record Type:
Journal Article
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