1. (Invited) Manufacturing Microwave AlGaN/GaN High Electron Mobility Transistors (HEMTs) on Truly Bulk Semi-Insulating GaN Substrates. (23rd August 2016) Authors: Piotrowska, Anna Barbara; Kaminska, Eliana Anetka; Wojtasiak, Wojciech; Gwarek, Wojciech; Kucharski, Robert; Zajac, Marcin; Prystawko, Pawel; Kruszewski, Piotr; Ekielski, Marek; Kaczmarski, Jakub; Kozubal, Maciej; Trajnerowicz, Artur; Taube, Andrzej Journal: ECS transactions Issue: Volume 75:Number 12(2016) Page Start: 77 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Electrical and structural properties of Ti/Al‐based contacts on AlGaN/GaN heterostructures with different quality. Issue 5 (26th January 2015) Authors: Greco, Giuseppe; Iucolano, Ferdinando; Bongiorno, Corrado; Di Franco, Salvatore; Lo Nigro, Raffaella; Giannazzo, Filippo; Prystawko, Pawel; Kruszewski, Piotr; Krysko, Marcin; Grzanka, Ewa; Leszczynski, Michał; Tudisco, Cristina; Condorelli, Guglielmo Guido; Roccaforte, Fabrizio Journal: Physica status solidi Issue: Volume 212:Issue 5(2015:May) Page Start: 1091 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Fabrication and Characterization of Graphene Heterostructures with Nitride Semiconductors for High Frequency Vertical Transistors. Issue 10 (13th November 2017) Authors: Giannazzo, Filippo; Fisichella, Gabriele; Greco, Giuseppe; Schilirò, Emanuela; Deretzis, Ioannis; Lo Nigro, Raffaella; La Magna, Antonino; Roccaforte, Fabrizio; Iucolano, Ferdinando; Lo Verso, Stella; Ravesi, Sebastiano; Prystawko, Pawel; Kruszewski, Piotr; Leszczyński, Mike; Dagher, Roy; Frayssi... Other Names: Scholz Ferdinand guestEditor.; Schwarz Ulrich guestEditor.; Vescan Andrei guestEditor.; Wernicke Tim guestEditor. Journal: Physica status solidi Issue: Volume 215:Issue 10(2018) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Growth and characterization of thin Al-rich AlGaN on bulk GaN as an emitter-base barrier for hot electron transistor. (April 2019) Authors: Prystawko, Pawel; Giannazzo, F.; Krysko, M.; Smalc-Koziorowska, J.; Schilirò, E.; Greco, G.; Roccaforte, F.; Leszczynski, M. Journal: Materials science in semiconductor processing Issue: Volume 93(2019) Page Start: 153 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Properties of AlGaN/GaN Ni/Au‐Schottky diodes on 2°‐off silicon carbide substrates. Issue 4 (10th February 2017) Authors: Kruszewski, Piotr; Grabowski, Mikolaj; Prystawko, Pawel; Nowakowska‐Siwinska, Anna; Sarzynski, Marcin; Leszczynski, Mike Journal: Physica status solidi Issue: Volume 214:Issue 4(2017) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition. (July 2019) Authors: Schilirò, Emanuela; Giannazzo, Filippo; Bongiorno, Corrado; Di Franco, Salvatore; Greco, Giuseppe; Roccaforte, Fabrizio; Prystawko, Pawel; Kruszewski, Piotr; Leszczyński, Mike; Krysko, Marcin; Michon, Adrien; Cordier, Yvon; Cora, Ildiko; Pecz, Bela; Gargouri, Hassan; Nigro, Raffaella Lo Journal: Materials science in semiconductor processing Issue: Volume 97(2019) Page Start: 35 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Terahertz electroluminescence of shallow impurities in AlGaN/GaN heterostructures at 20 K and 110 K temperature. (April 2019) Authors: Grigelionis, Ignas; Jorudas, Justinas; Jakštas, Vytautas; Janonis, Vytautas; Kašalynas, Irmantas; Prystawko, Pawel; Kruszewski, Piotr; Leszczyński, Michal Journal: Materials science in semiconductor processing Issue: Volume 93(2019) Page Start: 280 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗