1. A calculation method to estimate single event upset cross section. (September 2017) Authors: Wrobel, F.; Touboul, A.D.; Pouget, V.; Dilillo, L.; Boch, J.; Saigné, F. Journal: Microelectronics and reliability Issue: Volume 76/77(2017) Page Start: 644 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Analysis of the charge sharing effect in the SET sensitivity of bulk 45 nm standard cell layouts under heavy ions. (September 2018) Authors: Aguiar, Y.Q.; Wrobel, F.; Autran, J.-L.; Leroux, P.; Saigné, F.; Touboul, A.D.; Pouget, V. Journal: Microelectronics and reliability Issue: Volume 88/90(2018) Page Start: 920 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Approximate TMR based on successive approximation and loop perforation in microprocessors. (September 2019) Authors: Rodrigues, G.S.; Fonseca, J.S.; Kastensmidt, F.L.; Pouget, V.; Bosio, A.; Hamdioui, S. Journal: Microelectronics and reliability Issue: Volume 100/101(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Design exploration of majority voter architectures based on the signal probability for TMR strategy optimization in space applications. (November 2020) Authors: Aguiar, Y.Q.; Wrobel, F.; Autran, J.-L.; Leroux, P.; Saigné, F.; Pouget, V.; Touboul, A.D. Journal: Microelectronics and reliability Issue: Volume 114(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Modelling of charge injection by multi-photon absorption in GaN-on-Si HEMTs for SEE testing. (November 2021) Authors: Ngom, C.; Pouget, V.; Zerarka, M.; Coccetti, F.; Crepel, O.; Touboul, A.; Matmat, M. Journal: Microelectronics and reliability Issue: Volume 126(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Radiation hardening efficiency of gate sizing and transistor stacking based on standard cells. (September 2019) Authors: Aguiar, Y.Q.; Wrobel, F.; Guagliardo, S.; Autran, J.-L.; Leroux, P.; Saigné, F.; Touboul, A.D.; Pouget, V. Journal: Microelectronics and reliability Issue: Volume 100/101(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Reliability-driven pin assignment optimization to improve in-orbit soft-error rate. (November 2020) Authors: Aguiar, Y.Q.; Wrobel, F.; Autran, J.-L.; Leroux, P.; Saigné, F.; Pouget, V.; Touboul, A.D. Journal: Microelectronics and reliability Issue: Volume 114(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Single-Event Latchup sensitivity: Temperature effects and the role of the collected charge. (April 2021) Authors: Guagliardo, S.; Wrobel, F.; Aguiar, Y.Q.; Autran, J.-L.; Leroux, P.; Saigné, F.; Pouget, V.; Touboul, A.D. Journal: Microelectronics and reliability Issue: Volume 119(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Structural pattern extraction from asynchronous two-photon laser fault injection using spectral analysis. (September 2017) Authors: Pouget, V.; Jonathas, S.; Job, R.; Vaillé, J.R.; Wrobel, F.; Saigné, F. Journal: Microelectronics and reliability Issue: Volume 76/77(2017) Page Start: 650 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗