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Author/Creator Potier, Clément

1. Highlighting trapping phenomena in microwave GaN HEMTs by low-frequency S-parameters. Issue 3 (5th February 2015)

Authors:
Potier, Clément; Jacquet, Jean-Claude; Dua, Christian; Martin, Audrey; Campovecchio, Michel; Oualli, Mourad; Jardel, Olivier; Piotrowicz, Stéphane; Laurent, Sylvain; Aubry, Raphaël; Patard, Olivier; Gamarra, Piero; di Forte-Poisson, Marie-Antoinette; Delage, Sylvain L.; Quéré, Raymond
Editors:
Perregrini, Luca; Colantonio, Paolo; Berizzi, Fabrizio
Journal:
International journal of microwave and wireless technologies
Issue:
Volume 7:Issue 3/4(2015)
Page Start:
287
Record Type:
Journal Article
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2. InAlGaN/GaN with AlGaN back-barrier HEMT technology on SiC for Ka-band applications. Issue 1 (27th November 2017)

Authors:
Piotrowicz, Stéphane; Jacquet, Jean-Claude; Gamarra, Piero; Patard, Olivier; Dua, Christian; Chartier, Eric; Michel, Nicolas; Oualli, Mourad; Lacam, Cedric; Potier, Clément; Altuntas, Philippe; Delage, Sylvain
Editors:
Fourn, Erwan
Journal:
International journal of microwave and wireless technologies
Issue:
Volume 10:Issue 1(2018)
Page Start:
39
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗