1. Analysis of multifinger power HEMTs supported by effective 3-D device electrothermal simulation. (November 2017) Authors: Chvála, Aleš; Marek, Juraj; Príbytný, Patrik; Šatka, Alexander; Stoffels, Steve; Posthuma, Niels; Decoutere, Stefaan; Donoval, Daniel Journal: Microelectronics and reliability Issue: Volume 78(2017) Page Start: 148 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Boron‐doped selective silicon epitaxy: high efficiency and process simplification in interdigitated back contact cells. (9th October 2013) Authors: Recamán Payo, María; Posthuma, Niels; Urueña de Castro, Angel; Debucquoy, Maarten; Poortmans, Jef Journal: Progress in photovoltaics Issue: Volume 22:Number 7(2014) Page Start: 711 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. GaN power IC design using the MIT virtual source GaNFET compact model with gate leakage and VT instability effect. (28th January 2021) Authors: You, Shuzhen; Li, Xiangdong; Geens, Karen; Posthuma, Niels; Zhao, Ming; Liang, Hu; Groeseneken, Guido; Decoutere, Stefaan Journal: Semiconductor science and technology Issue: Volume 36:Number 3(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Impact of crystal orientation on ohmic contact resistance of enhancement-mode p-GaN gate high electron mobility transistors on 200 mm silicon substrates. (14th February 2018) Authors: Van Hove, Marleen; Posthuma, Niels; Geens, Karen; Wellekens, Dirk; Li, Xiangdong; Decoutere, Stefaan Journal: Japanese journal of applied physics Issue: Volume 57:Number 4(2018)Supplement Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Integration of GaN analog building blocks on p-GaN wafers for GaN ICs. (February 2021) Authors: Li, Xiangdong; Geens, Karen; Amirifar, Nooshin; Zhao, Ming; You, Shuzhen; Posthuma, Niels; Liang, Hu; Groeseneken, Guido; Decoutere, Stefaan Journal: Journal of semiconductors Issue: Volume 42:Number 2(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis. (September 2016) Authors: Rossetto, Isabella; Meneghini, Matteo; Rizzato, Vanessa; Ruzzarin, Maria; Favaron, Andrea; Stoffels, Steve; Van Hove, Marleen; Posthuma, Niels; Wu, Tian-Li; Marcon, Denis; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico Journal: Microelectronics and reliability Issue: Volume 64(2016) Page Start: 547 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis. (September 2016) Authors: Rossetto, Isabella; Meneghini, Matteo; Rizzato, Vanessa; Ruzzarin, Maria; Favaron, Andrea; Stoffels, Steve; Van Hove, Marleen; Posthuma, Niels; Wu, Tian-Li; Marcon, Denis; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico Journal: Microelectronics and reliability Issue: Volume 64(2016) Page Start: 547 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗