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Author/Creator Posthuma, Niels

4. Impact of crystal orientation on ohmic contact resistance of enhancement-mode p-GaN gate high electron mobility transistors on 200 mm silicon substrates. (14th February 2018)

Authors:
Van Hove, Marleen; Posthuma, Niels; Geens, Karen; Wellekens, Dirk; Li, Xiangdong; Decoutere, Stefaan
Journal:
Japanese journal of applied physics
Issue:
Volume 57:Number 4(2018)Supplement
Page Start:
Record Type:
Journal Article
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6. Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis. (September 2016)

Authors:
Rossetto, Isabella; Meneghini, Matteo; Rizzato, Vanessa; Ruzzarin, Maria; Favaron, Andrea; Stoffels, Steve; Van Hove, Marleen; Posthuma, Niels; Wu, Tian-Li; Marcon, Denis; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico
Journal:
Microelectronics and reliability
Issue:
Volume 64(2016)
Page Start:
547
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗

7. Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis. (September 2016)

Authors:
Rossetto, Isabella; Meneghini, Matteo; Rizzato, Vanessa; Ruzzarin, Maria; Favaron, Andrea; Stoffels, Steve; Van Hove, Marleen; Posthuma, Niels; Wu, Tian-Li; Marcon, Denis; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico
Journal:
Microelectronics and reliability
Issue:
Volume 64(2016)
Page Start:
547
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗