1. On the origin of dynamic Ron in commercial GaN-on-Si HEMTs. (February 2018) Authors: Karboyan, Serge; Uren, Michael J.; Manikant, ; Pomeroy, James W.; Kuball, Martin Journal: Microelectronics and reliability Issue: Volume 81(2018) Page Start: 306 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Impact of thinning the GaN buffer and interface layer on thermal and electrical performance in GaN-on-diamond electronic devices. (31st January 2019) Authors: Middleton, Callum; Chandrasekar, Hareesh; Singh, Manikant; Pomeroy, James W.; Uren, Michael J.; Francis, Daniel; Kuball, Martin Journal: Applied physics express Issue: Volume 12:Number 2(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Evaluating the interfacial toughness of GaN-on-diamond with an improved analysis using nanoindentation. (1st March 2022) Authors: Field, Daniel E.; Beale, Ryan; Getzler, Naomi; Pomeroy, James W.; Leide, Alexander J.; Francis, Daniel; Twitchen, Daniel; Faili, Firooz; Liu, Dong; Kuball, Martin Journal: Scripta materialia Issue: Number 209(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Scanning thermal microscopy for accurate nanoscale device thermography. (August 2021) Authors: Gucmann, Filip; Pomeroy, James W.; Kuball, Martin Journal: Nano today Issue: Volume 39(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Impact of diamond seeding on the microstructural properties and thermal stability of GaN-on-diamond wafers for high-power electronic devices. (February 2017) Authors: Liu, Dong; Francis, Daniel; Faili, Firooz; Middleton, Callum; Anaya, Julian; Pomeroy, James W.; Twitchen, Daniel J.; Kuball, Martin Journal: Scripta materialia Issue: Volume 128(2017) Page Start: 57 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Measuring the thermal conductivity of the GaN buffer layer in AlGaN/GaN HEMTs. Issue 8 (23rd February 2015) Authors: Power, Máire; Pomeroy, James W.; Otoki, Yohei; Tanaka, Takeshi; Wada, Jiro; Kuzuhara, Masaaki; Jantz, Wolfgang; Souzis, Andrew; Kuball, Martin Journal: Physica status solidi Issue: Volume 212:Issue 8(2015:Aug.) Page Start: 1742 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Influence of microstructural defects on the thermal conductivity of GaN: A molecular dynamics study. Issue 8 (25th February 2013) Authors: Spiteri, David; Pomeroy, James W.; Kuball, Martin Journal: Physica status solidi Issue: Volume 250:Issue 8(2013:Aug.) Page Start: 1541 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Thermal properties of AlGaN/GaN high electron mobility transistors on 4H and 6H SiC substrates. Issue 12 (21st August 2014) Authors: Killat, Nicole; Pomeroy, James W.; Jimenez, Jose L.; Kuball, Martin Journal: Physica status solidi Issue: Volume 211:Issue 12(2014:Dec.) Page Start: 2844 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗