Impact of diamond seeding on the microstructural properties and thermal stability of GaN-on-diamond wafers for high-power electronic devices. (February 2017)

• Record Type: Journal Article
• Authors: Liu, Dong; Francis, Daniel; Faili, Firooz; Middleton, Callum; Anaya, Julian; Pomeroy, James W.; Twitchen, Daniel J.; Kuball, Martin
• Is Part Of: Scripta materialia. Volume 128(2017)
• Page Start: 57
• Page End: 60
• Publication Date: 2017-02
• Subjects: Compound semiconductors -- Diamond films -- Microstructure -- Thermal conductivity; Materials -- Periodicals; Metallurgy -- Periodicals; Metalen; Legeringen; Materiaalkunde; Metals, metalworking and machinery industries; Metals; Electronic journals; 620.11
• DOI: 10.1016/j.scriptamat.2016.10.006
• Languages: English
• ISSNs: 1359-6462

Abstract

Abstract: The impact of seeding of the diamond growth on the microstructural properties of GaN-on-diamond wafers was studied using in situ focused ion beam cross-sectioning and scanning electron microscopy imaging. Microstructural studies revealed that the seeding conditions are a critical parameter to obtain an optimal material, allowing the manufacture of GaN-on-diamond wafers with no microscopic defects and with structural stability under thermal annealing at 825 °C. The use of the right seeding conditions also results in homogeneous thermal properties across four inch GaN-on-diamond wafers, which is of critical importance for their use for ultra-high power microwave electronic devices. Graphical abstract: