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42. New RP‐CVD grown ultra‐high performance selectively B‐doped pure‐Ge 20 nm QWs on (100)Si as basis material for post‐Si CMOS technology. Issue 1 (9th December 2013)

43. NMOS contact resistivity reduction with implants into silicides. Issue 1 (9th December 2013)

44. Observation of point defect injection from electrical deactivation of arsenic ultra‐shallow distributions formed by ultra‐low energy ion implantation and laser sub‐melt annealing. Issue 1 (9th December 2013)

45. On a Novel Source Technology for Deep Aluminum Diffusion for Silicon Power Electronics. Issue 17 (17th July 2019)

46. On an improved boron segregation calibration from a particularly sensitive power MOS process. Issue 1 (9th December 2013)

50. Regression and statistical shape model based substitute CT generation for MRI alone external beam radiation therapy from standard clinical MRI sequences. (27th October 2017)