1. Analysis of GaN cap layer effecting on critical voltage for electrical degradation of AlGaN/GaN HEMT. Issue 1 (10th October 2014) Authors: Qu, Shenqi; Wang, Xiaoliang; Xiao, Hongling; Wang, Cuimei; Jiang, Lijuan; Feng, Chun; Chen, Hong; Yin, Haibo; Yan, Junda; Peng, Enchao; Kang, He; Wang, Zhanguo; Hou, Xun Journal: European physical journal Issue: Number 68:Issue 1(2014:Oct.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Analysis of transconductance characteristic of AlGaN/GaN HEMTs with graded AlGaN layer. Issue 2 (5th June 2014) Authors: Qu, Shenqi; Wang, Xiaoliang; Xiao, Hongling; Wang, Cuimei; Jiang, Lijuan; Feng, Chun; Chen, Hong; Yin, Haibo; Peng, Enchao; Kang, He; Wang, Zhanguo; Hou, Xun Journal: European physical journal Issue: Number 66:Issue 2(2014:May) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Effects of a GaN cap layer on the reliability of AlGaN/GaN Schottky diodes. Issue 5 (14th January 2015) Authors: Kang, He; Wang, Quan; Xiao, Hongling; Wang, Cuimei; Jiang, Lijuan; Feng, Chun; Chen, Hong; Yin, Haibo; Qu, Shenqi; Peng, Enchao; Gong, Jiamin; Wang, Xiaoliang; Li, Baiquan; Wang, Zhanguo; Hou, Xun Journal: Physica status solidi Issue: Volume 212:Issue 5(2015:May) Page Start: 1158 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗