Effects of a GaN cap layer on the reliability of AlGaN/GaN Schottky diodes. Issue 5 (14th January 2015)

• Record Type: Journal Article
• Authors: Kang, He; Wang, Quan; Xiao, Hongling; Wang, Cuimei; Jiang, Lijuan; Feng, Chun; Chen, Hong; Yin, Haibo; Qu, Shenqi; Peng, Enchao; Gong, Jiamin; Wang, Xiaoliang; Li, Baiquan; Wang, Zhanguo; Hou, Xun
• Is Part Of: Physica status solidi. Volume 212:Issue 5(2015:May)
• Page Start: 1158
• Page End: 1161
• Publication Date: 2015-01-14
• Subjects: Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201431719
• Languages: English
• ISSNs: 1862-6300

Abstract

<abstract abstract-type="main" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <sec id="pssa201431719-sec-0001" sec-type="section"> <p>In this paper, AlGaN/GaN‐ and GaN/AlGaN/GaN‐based Schottky barrier diodes (SBDs) were fabricated and studied for comparison. The recorded electrical characteristics of the devices show that the introduction of a GaN cap layer can evidently reduce the reverse leakage current and suppress the forward current decay of the devices. What is more important, the GaN/AlGaN/GaN‐based SBDs are capable of greatly alleviating the unrecoverable degradation of the reverse characteristics, which was observed in the device without a GaN cap layer when the device was under long time reverse dc stress. Detailed analyses were discussed.</p> </sec> </abstract>