41. Preface—JSS Focus Issue on GaN-Based Electronics for Power, RF, and Rad-Hard Applications. (1st January 2017) Authors: Ren, Fan; Bardwell, Jennifer A.; Pearton, Stephen J.; Overberg, Mark E. Journal: ECS journal of solid state science and technology Issue: Volume 6:Number 11(2017) Page Start: Y7 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
42. Preface—JSS Focus Issue on GaN-Based Electronics for Power, RF, and Rad-Hard Applications. (9th December 2017) Authors: Ren, Fan; Bardwell, Jennifer A.; Pearton, Stephen J.; Overberg, Mark E. Journal: ECS journal of solid state science and technology Issue: Volume 6:Number 11(2017) Page Start: Y7 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
43. Proton Irradiation of High Aluminum Content AlGaN Polarization Doped Field Effect Transistors. (10th February 2020) Authors: Carey, Patrick H.; Ren, Fan; Bae, Jinho; Kim, Jihyun; Pearton, Stephen J. Journal: ECS journal of solid state science and technology Issue: Volume 9:Number 2(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
44. Quasi-two-dimensional β-gallium oxide solar-blind photodetectors with ultrahigh responsivity. Issue 39 (23rd September 2016) Authors: Oh, Sooyeoun; Kim, Janghyuk; Ren, Fan; Pearton, Stephen J.; Kim, Jihyun Journal: Journal of materials chemistry Issue: Volume 4:Issue 39(2016) Page Start: 9245 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
45. Radiation damage effects in Ga2O3 materials and devices. Issue 1 (1st November 2018) Authors: Kim, Jihyun; Pearton, Stephen J.; Fares, Chaker; Yang, Jiancheng; Ren, Fan; Kim, Suhyun; Polyakov, Alexander Y. Journal: Journal of materials chemistry Issue: Volume 7:Issue 1(2019) Page Start: 10 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
46. Review of Graphene as a Solid State Diffusion Barrier. Issue 1 (2nd November 2015) Authors: Morrow, Wayne K.; Pearton, Stephen J.; Ren, Fan Journal: Small Issue: Volume 12:Issue 1(2016) Page Start: 120 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
47. Role of graphene interlayers in mitigating degradation of Ni/Au ohmic contact morphology on p-type GaN. (June 2016) Authors: Morrow, Wayne K.; Lee, Changmin; DenBaars, Steven P.; Ren, Fan; Pearton, Stephen J. Journal: Vacuum Issue: Volume 128(2016) Page Start: 34 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
48. Simulation of Radiation Effects in AlGaN/GaN HEMTs. (1st January 2015) Authors: Patrick, Erin E.; Choudhury, Mohua; Ren, Fan; Pearton, Stephen J.; Law, Mark E. Journal: ECS journal of solid state science and technology Issue: Volume 4:Number 3(2015) Page Start: Q21 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
49. Simulation of Radiation Effects in AlGaN/GaN HEMTs. (24th January 2015) Authors: Patrick, Erin E.; Choudhury, Mohua; Ren, Fan; Pearton, Stephen J.; Law, Mark E. Journal: ECS journal of solid state science and technology Issue: Volume 4:Number 3(2015) Page Start: Q21 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
50. Study of the Effects of GaN Buffer Layer Quality on the dc Characteristics of AlGaN/GaN High Electron Mobility Transistors. (16th September 2015) Authors: Ahn, Shihyun; Zhu, Weidi; Dong, Chen; Hwang, Ya-Hsi; Kim, Byung-Jae; Ren, Fan; Pearton, Stephen J.; Lind, Aaron Gregg; Jones, Kevin Scott; Kravchenko, Ivan Journal: ECS transactions Issue: Volume 69:Number 14(2015) Page Start: 103 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗