1. (Invited) Comparison of High Voltage, Vertical Geometry Ga2O3 Rectifiers with GaN and SiC. (3rd July 2019) Authors: Yang, Jiancheng; Fares, Chaker; Carey, Patrick H; Xian, Minghan; Ren, Fan; Tadjer, Marko J.; Chen, Yen-Ting; Liao, Yu-Te; Chang, Chin-Wei; Lin, Jenshan; Sharma, Ribhu; Law, Mark E; Raad, Peter E.; Komarov, Pavel L.; Smith, David J; Kuramata, Akito; Pearton, Stephen J. Journal: ECS transactions Issue: Volume 92:Number 7(2019) Page Start: 15 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. (Invited) Radiation Effects in AlGaN/GaN and InAlN/GaN High Electron Mobility Transistors. (13th April 2015) Authors: Pearton, Stephen J.; Hwang, Ya-Hsi; Ren, Fan Journal: ECS transactions Issue: Volume 66:Number 1(2015) Page Start: 3 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. (Invited) Simulation of Radiation Effects in AlGaN/GaN HEMTs. (13th April 2015) Authors: Patrick, Erin; Choudhury, Mohua; Ren, Fan; Pearton, Stephen J.; Law, Mark E Journal: ECS transactions Issue: Volume 66:Number 1(2015) Page Start: 21 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. (Invited) Simulation of the Effects of As-Grown Defects on GaN-Based Power HEMTs. (23rd August 2016) Authors: Mukherjee, Shrijit; Patrick, Erin; Law, Mark E; Ren, Fan; Pearton, Stephen J. Journal: ECS transactions Issue: Volume 75:Number 12(2016) Page Start: 107 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. (Keynote) Advances in Ga2O3 Processing and Devices. (25th October 2017) Authors: Yang, Jiancheng; Carey, Patrick; Ahn, Shihyun; Ren, Fan; Jang, Soohwan; Kim, Jihyun; Hays, David; Pearton, Stephen J.; Kuramata, Akito Journal: ECS transactions Issue: Volume 80:Number 10(2017) Page Start: 959 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. 2D Material‐Based Vertical Double Heterojunction Bipolar Transistors with High Current Amplification. (27th December 2018) Authors: Lee, Geonyeop; Pearton, Stephen J.; Ren, Fan; Kim, Jihyun Journal: Advanced Electronic Materials Issue: Volume 5:Number 3(2019) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. A Novel Approach to Improve Heat Dissipation of AlGaN/GaN High Electron Mobility Transistors with a Backside Cu Via. (13th April 2015) Authors: Hwang, Ya-Hsi; Kang, Tsung-Sheng; Ren, Fan; Pearton, Stephen J. Journal: ECS transactions Issue: Volume 66:Number 1(2015) Page Start: 223 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. A Novel Backside Gate Structure to Improve Device Performance. (13th April 2015) Authors: Hwang, Ya-Hsi; Zhu, Weidi; Dong, Chen; Ahn, Shihyun; Ren, Fan; Kravchenko, Ivan; Smith, David; Pearton, Stephen J. Journal: ECS transactions Issue: Volume 66:Number 1(2015) Page Start: 185 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. AlGaN/GaN High Electron Mobility Transistor Grown and Fabricated on ZrTi Metallic Alloy Buffer Layers. (1st January 2017) Authors: Ren, Fan; Pearton, Stephen J.; Ahn, Shihyun; Lin, Yi-Hsuan; Machuca, Francisco; Weiss, Robert; Welsh, Alex; McCartney, Martha R.; Smith, David J.; Kravchenko, Ivan I. Journal: ECS journal of solid state science and technology Issue: Volume 6:Number 11(2017) Page Start: S3078 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. AlGaN/GaN High Electron Mobility Transistor Grown and Fabricated on ZrTi Metallic Alloy Buffer Layers. (26th September 2017) Authors: Ren, Fan; Pearton, Stephen J.; Ahn, Shihyun; Lin, Yi-Hsuan; Machuca, Francisco; Weiss, Robert; Welsh, Alex; McCartney, Martha R.; Smith, David J.; Kravchenko, Ivan I. Journal: ECS journal of solid state science and technology Issue: Volume 6:Number 11(2017) Page Start: S3078 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗