11. Band Alignment of Al2O3 on α-(AlxGa1-x)2O3. (1st February 2022) Authors: Xia, Xinyi; Al-Mamun, Nahid Sultan; Fares, Chaker; Haque, Aman; Ren, Fan; Hassa, Anna; von Wenckstern, Holger; Grundmann, Marius; Pearton, S. J. Journal: ECS journal of solid state science and technology Issue: Volume 11:Number 2(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
12. Band Alignment of Atomic Layer Deposited SiO2 and Al2O3 on (AlxGa1-x)2O3 for x = 0.2-0.65. (1st January 2019) Authors: Fares, Chaker; Kneiß, Max; von Wenckstern, Holger; Tadjer, Marko; Ren, Fan; Lambers, Eric; Grundmann, Marius; Pearton, S. J. Journal: ECS journal of solid state science and technology Issue: Volume 8:Number 6(6019) Page Start: P351 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
13. Band Alignment of Atomic Layer Deposited SiO2 and Al2O3 on (AlxGa1-x)2O3 for x = 0.2-0.65. (20th June 2019) Authors: Fares, Chaker; Kneiß, Max; von Wenckstern, Holger; Tadjer, Marko; Ren, Fan; Lambers, Eric; Grundmann, Marius; Pearton, S. J. Journal: ECS journal of solid state science and technology Issue: Volume 8:Number 6(6019) Page Start: P351 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
14. Band Offsets for Atomic Layer Deposited HfSiO4 on (Al0.14Ga0.86)2O3. (15th September 2018) Authors: Fares, Chaker; Ren, F.; Lambers, Eric; Hays, David C.; Gila, B. P.; Pearton, S. J. Journal: ECS journal of solid state science and technology Issue: Volume 7:Number 10(2018) Page Start: P519 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
15. Band Offsets for Atomic Layer Deposited HfSiO4 on (Al0.14Ga0.86)2O3. (1st January 2018) Authors: Fares, Chaker; Ren, F.; Lambers, Eric; Hays, David C.; Gila, B. P.; Pearton, S. J. Journal: ECS journal of solid state science and technology Issue: Volume 7:Number 10(2018) Page Start: P519 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
16. Communication—Electron-Beam Stimulated Release of Dislocations from Pinning Sites in GaN. (1st January 2022) Authors: Vergeles, P. S.; Kulanchikov, Yu. O.; Polyakov, A. Y.; Yakimov, E. B.; Pearton, S. J. Journal: ECS journal of solid state science and technology Issue: Volume 11:Number 1(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
17. Damage Recovery and Dopant Diffusion in Si and Sn Ion Implanted β-Ga2O3. (13th March 2019) Authors: Tadjer, Marko J.; Fares, Chaker; Mahadik, Nadeemullah A.; Freitas, Jaime A.; Smith, David; Sharma, Ribhu; Law, Mark E.; Ren, Fan; Pearton, S. J.; Kuramata, A. Journal: ECS journal of solid state science and technology Issue: Volume 8:Number 7(2019) Page Start: Q3133 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
18. Damage Recovery and Dopant Diffusion in Si and Sn Ion Implanted β-Ga2O3. (1st January 2019) Authors: Tadjer, Marko J.; Fares, Chaker; Mahadik, Nadeemullah A.; Freitas, Jaime A.; Smith, David; Sharma, Ribhu; Law, Mark E.; Ren, Fan; Pearton, S. J.; Kuramata, A. Journal: ECS journal of solid state science and technology Issue: Volume 8:Number 7(2019) Page Start: Q3133 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
19. Deep Electron and Hole Traps in Electron-Irradiated Green GaN/InGaN Light Emitting Diodes. (1st January 2017) Authors: Lee, In-Hwan; Polyakov, A. Y.; Smirnov, N. B.; Shchemerov, I. V.; Chung, Tae-Hoon; Lagov, P. B.; Zinov'ev, R. A.; Pearton, S. J. Journal: ECS journal of solid state science and technology Issue: Volume 6:Number 10(2017) Page Start: Q127 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
20. Deep Electron and Hole Traps in Electron-Irradiated Green GaN/InGaN Light Emitting Diodes. (5th October 2017) Authors: Lee, In-Hwan; Polyakov, A. Y.; Smirnov, N. B.; Shchemerov, I. V.; Chung, Tae-Hoon; Lagov, P. B.; Zinov'ev, R. A.; Pearton, S. J. Journal: ECS journal of solid state science and technology Issue: Volume 6:Number 10(2017) Page Start: Q127 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗