1. Thermally oxidized 2D TaS2 as a high-κ gate dielectric for MoS2 field-effect transistors. (22nd June 2017) Authors: Chamlagain, Bhim; Cui, Qingsong; Paudel, Sagar; Cheng, Mark Ming-Cheng; Chen, Pai-Yen; Zhou, Zhixian Journal: 2D materials Issue: Volume 4:Number 3(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗