Thermally oxidized 2D TaS2 as a high-κ gate dielectric for MoS2 field-effect transistors. (22nd June 2017)

• Record Type: Journal Article
• Authors: Chamlagain, Bhim; Cui, Qingsong; Paudel, Sagar; Cheng, Mark Ming-Cheng; Chen, Pai-Yen; Zhou, Zhixian
• Is Part Of: 2D materials. Volume 4:Number 3(2017)
• Publication Date: 2017-06-22
• Subjects: 2D -- MoS2 -- TaS2 -- Ta2O5 -- high-κ dielectric -- thermal oxidation; Graphene -- Periodicals; Materials science -- Periodicals; Nanostructured materials -- Periodicals; 620.115
• DOI: 10.1088/2053-1583/aa780e
• Languages: English
• ISSNs: 2053-1583

Abstract

Abstract: We report a new approach to integrating high- κ dielectrics in both bottom- and top-gated MoS2 field-effect transistors (FETs) through thermal oxidation and mechanical assembly of layered two-dimensional (2D) TaS2 . Combined x-ray photoelectron spectroscopy (XPS), optical microscopy, atomic force microscopy (AFM), and capacitance–voltage ( C – V ) measurements confirm that multilayer TaS2 flakes can be uniformly transformed to Ta2 O5 with a high dielectric constant of ~15.5 via thermal oxidation, while preserving the geometry and ultra-smooth surfaces of 2D TMDs. Top-gated MoS2 FETs fabricated using the thermally oxidized Ta2 O5 as gate dielectric demonstrate a high current on/off ratio approaching 10 6, a subthreshold swing (SS) down to 61 mV/dec, and a field-effect mobility exceeding 60 cm 2 V −1 s −1 at room temperature, indicating high dielectric quality and low interface trap density.