1. Junctionless versus inversion-mode lateral semiconductor nanowire transistors. (3rd September 2018) Authors: Veloso, A; Matagne, P; Simoen, E; Kaczer, B; Eneman, G; Mertens, H; Yakimets, D; Parvais, B; Mocuta, D Journal: Journal of physics Issue: Volume 30:Number 38(2018) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Parasitic subthreshold drain current and low frequency noise in GaN/AlGaN metal-oxide-semiconductor high-electron-mobility field-effect-transistors. (17th December 2020) Authors: Takakura, K; Putcha, V; Simoen, E; Alian, A R; Peralagu, U; Waldron, N; Parvais, B; Collaert, N Journal: Semiconductor science and technology Issue: Volume 36:Number 2(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗