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3. Mitigation of Arsenic Contamination on the Back Side of Si Wafer Using SiO2 Protection Layer for III-V on Si Heterogeneous Epitaxy. (1st January 2016)

4. Mitigation of Arsenic Contamination on the Back Side of Si Wafer Using SiO2 Protection Layer for III-V on Si Heterogeneous Epitaxy. (27th April 2016)

5. Process to Form V-Grooved Trenches on Patterned Si (001) Substrates Using In Situ Selective Area Etching in a MOCVD Reactor. (1st January 2016)

6. Process to Form V-Grooved Trenches on Patterned Si (001) Substrates Using In Situ Selective Area Etching in a MOCVD Reactor. (1st June 2016)

7. Selective photochemical synthesis of Ag nanoparticles on position-controlled ZnO nanorods for the enhancement of yellow-green light emission. Issue 48 (25th November 2015)