1. The impact of growth parameters on trench defects in InGaN/GaN quantum wells. Issue 4 (14th February 2014) Authors: Massabuau, F. C.‐P.; Le Fol, A.; Pamenter, S. K.; Oehler, F.; Kappers, M. J.; Humphreys, C. J.; Oliver, R. A. Journal: Physica status solidi Issue: Volume 211:Issue 4(2014:Apr.) Page Start: 740 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗