The impact of growth parameters on trench defects in InGaN/GaN quantum wells. Issue 4 (14th February 2014)

• Record Type: Journal Article
• Authors: Massabuau, F. C.‐P.; Le Fol, A.; Pamenter, S. K.; Oehler, F.; Kappers, M. J.; Humphreys, C. J.; Oliver, R. A.
• Is Part Of: Physica status solidi. Volume 211:Issue 4(2014:Apr.)
• Page Start: 740
• Page End: 743
• Publication Date: 2014-02-14
• Subjects: Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201300485
• Languages: English
• ISSNs: 1862-6300

Abstract

<abstract abstract-type="main"> <title> <x xml:space="preserve">Abstract</x> </title> <sec id="pssa201300485-sec-0001" sec-type="section"> <p>The impact of the InGaN growth temperature and of the trimethylindium flux on trench defects has been investigated. We show that the density of defects is affected by both conditions but also their morphology and their emission properties. Therefore, the impact of such defect on the performance of quantum well structures can be controlled by adjusting these two growth conditions. Under usual conditions for making blue light emitting diodes, we observe that the enclosed region of the defect emits light at a longer wavelength. Nevertheless, our data also demonstrate that emission at a shorter wavelength is possible under certain growth conditions.</p> </sec> </abstract>