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2. Dc and ac electrical response of MOCVD grown GaN in p-i-n structure, assessed through I–V and admittance measurement. (29th November 2017)

3. Emission wavelength red-shift by using "semi-bulk" InGaN buffer layer in InGaN/InGaN multiple-quantum-well. (December 2017)

4. Gas sensors boosted by two-dimensional h-BN enabled transfer on thin substrate foils: towards wearable and portable applications. Issue 1 (December 2017)

5. Growth of "moth‐eye" ZnO nanostructures on Si(111), c‐Al2O3, ZnO and steel substrates by pulsed laser deposition. Issue 10 (6th August 2013)

6. Heterogeneous Integration: Novel Scalable Transfer Approach for Discrete III‐Nitride Devices Using Wafer‐Scale Patterned h‐BN/Sapphire Substrate for Pick‐and‐Place Applications (Adv. Mater. Technol. 10/2019). Issue 10 (10th October 2019)

7. High quality thick InGaN nanostructures grown by nanoselective area growth for new generation photovoltaic devices. Issue 4 (11th March 2015)

9. Influence of barrier layer indium on efficiency and wavelength of InGaN multiple quantum well (MQW) with and without semi‐bulk InGaN buffer for blue to green regime emission. Issue 8 (9th March 2017)

10. InGaN/InGaN multiple-quantum-well grown on InGaN/GaN semi-bulk buffer for blue to cyan emission with improved optical emission and efficiency droop. (April 2017)