1. Isochronal annealing study of Mg-implanted p-type GaN activated by ultra-high-pressure annealing. (16th April 2021) Authors: Hirukawa, Kazufumi; Sumida, Kensuke; Sakurai, Hideki; Fujikura, Hajime; Horita, Masahiro; Otoki, Yohei; Sierakowski, Kacper; Bockowski, Michal; Kachi, Tetsu; Suda, Jun Journal: Applied physics express Issue: Volume 14:Number 5(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Measuring the thermal conductivity of the GaN buffer layer in AlGaN/GaN HEMTs. Issue 8 (23rd February 2015) Authors: Power, Máire; Pomeroy, James W.; Otoki, Yohei; Tanaka, Takeshi; Wada, Jiro; Kuzuhara, Masaaki; Jantz, Wolfgang; Souzis, Andrew; Kuball, Martin Journal: Physica status solidi Issue: Volume 212:Issue 8(2015:Aug.) Page Start: 1742 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗