Isochronal annealing study of Mg-implanted p-type GaN activated by ultra-high-pressure annealing. (16th April 2021)

• Record Type: Journal Article
• Authors: Hirukawa, Kazufumi; Sumida, Kensuke; Sakurai, Hideki; Fujikura, Hajime; Horita, Masahiro; Otoki, Yohei; Sierakowski, Kacper; Bockowski, Michal; Kachi, Tetsu; Suda, Jun
• Is Part Of: Applied physics express. Volume 14:Number 5(2021)
• Publication Date: 2021-04-16
• Subjects: GaN -- ultra-high-pressure annealing -- Hall-effect measurements -- Mg implantation -- Semiconductor -- SIMS -- UHPA; Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.35848/1882-0786/abf4f3
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: Isochronal annealing was performed on Mg-ion-implanted GaN under 1 GPa N2 ambient pressure for 5 min at temperatures of 1573–1753 K. Secondary ion mass spectrometry showed diffusion of Mg atoms and introduction of H atoms during annealing. Deeper diffusion was observed with increasing temperature. From Hall-effect measurements, p-type conductivity was found even for the sample with the lowest annealing temperature of 1573 K. For this sample, the acceptor activation ratio was 23% and the compensation ratio was 93%. The acceptor activation ratio increased to almost 100% and the compensation ratio decreased to 12% with increasing annealing temperature.