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5. Growth‐Rate‐Dependent Properties of GaSb/GaAs Quantum Dots on (001) Ge Substrate by Molecular Beam Epitaxy (Phys. Status Solidi A 10∕2019). Issue 1 (9th January 2019)

6. Growth‐Rate‐Dependent Properties of GaSb/GaAs Quantum Dots on (001) Ge Substrate by Molecular Beam Epitaxy. Issue 1 (8th October 2018)