Growth‐Rate‐Dependent Properties of GaSb/GaAs Quantum Dots on (001) Ge Substrate by Molecular Beam Epitaxy (Phys. Status Solidi A 10∕2019). Issue 1 (9th January 2019)

• Record Type: Journal Article
• Authors: , Zon; Phienlumlert, Pakawat; Thainoi, Supachok; Kiravittaya, Suwit; Tandaechanurat, Aniwat; Nuntawong, Noppadon; Sopitpan, Suwat; Yordsri, Visittapong; Thanachayanont, Chanchana; Kanjanachuchai, Songphol; Ratanathammaphan, Somchai; Panyakeow, Somsak; Ota, Yasutomo; Iwamoto, Satoshi; Arakawa, Yasuhiko
• Other Names: Chowdhury Srabanti guestEditor.; Palacios Tomas guestEditor.; Xing Grace (Huili) guestEditor.
• Is Part Of: Physica status solidi. Volume 216:Issue 1(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-01-09
• Subjects: Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201970010
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : Quantum Dots Tuning growth of nanostructures can provide additional routes to engineer their characteristics. Combined growth of GaSb quantum dots (QDs) and GaAs on (001) Ge substrate provides the surface decorated with GaAs anti‐phase domain (APD). The elongated GaSb QDs act as a local probe of the GaAs crystalline direction of each APD. More details can be found in article number1800499 by Zon, Suwit Kiravittaya, Somsak Panyakeow, and co‐workers.