1. Analysis of static noise margin improvement for low voltage SRAM composed of nano-scale MOSFETs with ideal subthreshold factor and small variability. (July 2015) Authors: Tanaka, Chika; Saitoh, Masumi; Ota, Kensuke; Numata, Toshinori Journal: Solid-state electronics Issue: Volume 109(2015) Page Start: 58 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. BSIM4 parameter extraction for tri-gate Si nanowire transistors. (January 2016) Authors: Tanaka, Chika; Saitoh, Masumi; Ota, Kensuke; Ishikawa, Takayuki; Numata, Toshinori Journal: Microelectronics journal Issue: Volume 47(2016) Page Start: 1 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Comprehensive study of variability in poly-Si channel nanowire transistor. (22nd February 2019) Authors: Ota, Kensuke; Kawai, Tomoya; Saitoh, Masumi Journal: Japanese journal of applied physics Issue: Volume 58:Number SB(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Tear force of physically crosslinked poly(vinyl alcohol) gels with different submicrometer‐scale network structures. Issue 4 (23rd August 2014) Authors: Noh, Taegu; Bando, Yujiro; Ota, Kensuke; Sasaki, Saori; Suzuki, Atsushi Journal: Journal of applied polymer science Issue: Volume 132:Issue 4(2015:Feb. 15) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗