1. (Invited) Floating Gate Type SOI-FinFET Flash Memories with Different Channel Shapes and Interpoly Dielectric Materials. (26th April 2016) Authors: Liu, Yongxun; Nabatame, Toshihide; Matsukawa, Takashi; Endo, Kazuhiko; O'uchi, Shinichi; Mizubayashi, Wataru; Morita, Yukinori; Migita, Shinji; Ota, Hiroyuki; Chikyow, Toyohiro; Masahara, Meishoku Journal: ECS transactions Issue: Volume 72:Number 2(2016) Page Start: 11 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. (Invited) High Performance UTB GeOI n and pMOSFETs Featuring HEtero-Layer-Lift-Off (HELLO) Technology. (23rd July 2018) Authors: Chang, Wen Hsin; Irisawa, Toshifumi; Ishii, Hiroyuki; Hattori, Hiroyuki; Ota, Hiroyuki; Takagi, Hideki; Kurashima, Yuichi; Uchida, Noriyuki; Maeda, Tatsuro Journal: ECS transactions Issue: Volume 86:Number 10(2018) Page Start: 25 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Accelerated ferroelectric phase transformation in HfO2/ZrO2 nanolaminates. (4th May 2021) Authors: Migita, Shinji; Ota, Hiroyuki; Asanuma, Shutaro; Morita, Yukinori; Toriumi, Akira Journal: Applied physics express Issue: Volume 14:Number 5(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Achieving low parasitic resistance in Ge p-channel metal–oxide–semiconductor field-effect transistors by ion implantation after germanidation. (22nd April 2015) Authors: Chang, Wen Hsin; Ota, Hiroyuki; Maeda, Tatsuro Journal: Applied physics express Issue: Volume 8:Number 5(2015:May) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Anomalous change of carrier transport property of ferroelectric Hf0.5Zr0.5O2 thin films in the first poling treatment. (1st May 2022) Authors: Morita, Yukinori; Ota, Hiroyuki; Migita, Shinji Journal: Japanese journal of applied physics Issue: Volume 61:Number SC(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Bias temperature instability in tunnel field-effect transistors. (15th March 2017) Authors: Mizubayashi, Wataru; Mori, Takahiro; Fukuda, Koichi; Ishikawa, Yuki; Morita, Yukinori; Migita, Shinji; Ota, Hiroyuki; Liu, Yongxun; O'uchi, Shinichi; Tsukada, Junichi; Yamauchi, Hiromi; Matsukawa, Takashi; Masahara, Meishoku; Endo, Kazuhiko Journal: Japanese journal of applied physics Issue: Volume 56:Number 4(2017)Supplement Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Correlation analysis of organ doses determined by Monte Carlo simulation with dose metrics for patients undergoing chest-abdomen-pelvis CT examinations. (September 2020) Authors: Fujii, Keisuke; Nomura, Keiichi; Muramatsu, Yoshihisa; Goto, Takahiro; Obara, Satoshi; Ota, Hiroyuki; Tsukagoshi, Shinsuke Journal: Physica medica Issue: Volume 77(2020) Page Start: 1 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Design of steep-slope negative-capacitance FinFETs for dense integration: Importance of appropriate ferroelectric capacitance and short-channel effects. (23rd February 2018) Authors: Ota, Hiroyuki; Hattori, Junichi; Asai, Hidehiro; Ikegami, Tsutomu; Fukuda, Koichi; Migita, Shinji; Toriumi, Akira Journal: Japanese journal of applied physics Issue: Volume 57:Number 4(2018)Supplement Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Design points of ferroelectric field-effect transistors for memory and logic applications as investigated by metal-ferroelectric-metal–insulator–semiconductor gate stack structures using Hf0.5Zr0.5O2 films. (22nd August 2019) Authors: Migita, Shinji; Ota, Hiroyuki; Toriumi, Akira Journal: Japanese journal of applied physics Issue: Volume 58:Number SL(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Effect of hot implantation on ON-current enhancement utilizing isoelectronic trap in Si-based tunnel field-effect transistors. (24th February 2015) Authors: Mori, Takahiro; Mizubayashi, Wataru; Morita, Yukinori; Migita, Shinji; Fukuda, Koichi; Miyata, Noriyuki; Yasuda, Tetsuji; Masahara, Meishoku; Ota, Hiroyuki Journal: Applied physics express Issue: Volume 8:Number 3(2015:Mar.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗