1. Effect of barrier recess on transport and electrostatic interface properties of GaN-based normally-off and normally-on metal oxide semiconductor heterostructure field effect transistors. (November 2016) Authors: Capriotti, M.; Bahat Treidel, E.; Fleury, C.; Bethge, O.; Ostermaier, C.; Rigato, M.; Lancaster, S.L.C.; Brunner, F.; Detz, H.; Hilt, O.; Würfl, J.; Pogany, D.; Strasser, G. Journal: Solid-state electronics Issue: Volume 125(2016) Page Start: 118 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Effect of barrier recess on transport and electrostatic interface properties of GaN-based normally-off and normally-on metal oxide semiconductor heterostructure field effect transistors. (November 2016) Authors: Capriotti, M.; Bahat Treidel, E.; Fleury, C.; Bethge, O.; Ostermaier, C.; Rigato, M.; Lancaster, S.L.C.; Brunner, F.; Detz, H.; Hilt, O.; Würfl, J.; Pogany, D.; Strasser, G. Journal: Solid-state electronics Issue: Volume 125(2016) Page Start: 118 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Electrostatic Coupling and Identification of Single-Defects in GaN/AlGaN Fin-MIS-HEMTs. (June 2019) Authors: Grill, A.; Stampfer, B.; Im, Ki-Sik; Lee, J.-H.; Ostermaier, C.; Ceric, H.; Waltl, M.; Grasser, T. Journal: Solid-state electronics Issue: Volume 156(2019) Page Start: 41 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Matching in-situ and ex-situ recorded stress gradients in an AlxGa1 − xN Heterostructure: Complementary wafer curvature analyses in time and space. (1st April 2018) Authors: Reisinger, M.; Ostermaier, C.; Tomberger, M.; Zechner, J.; Sartory, B.; Ecker, W.; Daumiller, I.; Keckes, J. Journal: Scripta materialia Issue: Number 147(2018) Page Start: 50 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Positive and negative charge trapping GaN HEMTs: Interplay between thermal emission and transport-limited processes. (November 2021) Authors: Nardo, A.; De Santi, C.; Koller, C.; Ostermaier, C.; Daumiller, I.; Meneghesso, G.; Zanoni, E.; Meneghini, M. Journal: Microelectronics and reliability Issue: Volume 126(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Review of bias-temperature instabilities at the III-N/dielectric interface. (March 2018) Authors: Ostermaier, C.; Lagger, P.; Reiner, M.; Pogany, D. Journal: Microelectronics and reliability Issue: Volume 82(2018) Page Start: 62 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Stress and Recovery Dynamics of Drain Current in GaN HD-GITs Submitted to DC Semi-ON stress. (September 2019) Authors: Padovan, V.; Koller, C.; Pobegen, G.; Ostermaier, C.; Pogany, D. Journal: Microelectronics and reliability Issue: Volume 100/101(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗