1. An AlGaN/GaN field effect diode with a high turn‐on voltage controllability. Issue 8 (20th April 2017) Authors: Kato, Naoki; Wakejima, Akio; Osada, Yamato; Kamimura, Ryuichiro; Itoh, Kenji; Egawa, Takashi Journal: Physica status solidi Issue: Volume 214:Issue 8(2017) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. High external quantum efficiency (10%) AlGaN-based deep-ultraviolet light-emitting diodes achieved by using highly reflective photonic crystal on p-AlGaN contact layer. (30th November 2017) Authors: Kashima, Yukio; Maeda, Noritoshi; Matsuura, Eriko; Jo, Masafumi; Iwai, Takeshi; Morita, Toshiro; Kokubo, Mitsunori; Tashiro, Takaharu; Kamimura, Ryuichiro; Osada, Yamato; Takagi, Hideki; Hirayama, Hideki Journal: Applied physics express Issue: Volume 11:Number 1(2018) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Normally off AlGaN/GaN HEMT on Si substrate with selectively dry-etched recessed gate and polarization-charge-compensation δ-doped GaN cap layer. (20th January 2015) Authors: Wakejima, Akio; Ando, Akihiro; Watanabe, Arata; Inoue, Keita; Kubo, Toshiharu; Osada, Yamato; Kamimura, Ryuichiro; Egawa, Takashi Journal: Applied physics express Issue: Volume 8:Number 2(2015:Feb.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Reduction of plasma-induced damage in n-type GaN by multistep-bias etching in inductively coupled plasma reactive ion etching. (19th December 2019) Authors: Yamada, Shinji; Omori, Masato; Sakurai, Hideki; Osada, Yamato; Kamimura, Ryuichiro; Hashizume, Tamotsu; Suda, Jun; Kachi, Tetsu Journal: Applied physics express Issue: Volume 13:Number 1(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗