Author/Creator: Ono, Tomoya - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Ono, Tomoya

1. (Invited) First-Principles Study on Electron Conduction at 4H-SiC(0001)/SiO2 Interface. (19th August 2016)

Authors:: Ono, Tomoya; Kirkham, Christopher; Iwase, Shigeru
Journal:: ECS transactions
Issue:: Volume 75:Number 5(2016)
Page Start:: 121
Record Type:: Journal Article
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2. Electron-transport properties of ethyne-bridged diphenyl zinc-porphyrin molecules. (30th March 2015)

Authors:: Nguyen, Huy Duy; Ono, Tomoya
Journal:: Japanese journal of applied physics
Issue:: Volume 54:Number 5(2015:May)
Page Start:
Record Type:: Journal Article
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3. First-principles study on leakage current caused by oxygen vacancies at HfO2/SiO2/Si interface. (16th May 2018)

Authors:: Takagi, Kensuke; Ono, Tomoya
Journal:: Japanese journal of applied physics
Issue:: Volume 57:Number 6(2018)
Page Start:
Record Type:: Journal Article
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4. Highly Reproducible Formation of a Polymer Single‐Molecule Junction for a Well‐Defined Current Signal. (27th May 2019)

Authors:: Harashima, Takanori; Hasegawa, Yusuke; Kaneko, Satoshi; Kiguchi, Manabu; Ono, Tomoya; Nishino, Tomoaki
Journal:: Angewandte Chemie
Issue:: Volume 131:Number 27(2019)
Page Start:: 9207
Record Type:: Journal Article
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5. Highly Reproducible Formation of a Polymer Single‐Molecule Junction for a Well‐Defined Current Signal. Issue 27 (27th May 2019)

Authors:: Harashima, Takanori; Hasegawa, Yusuke; Kaneko, Satoshi; Kiguchi, Manabu; Ono, Tomoya; Nishino, Tomoaki
Journal:: Angewandte Chemie international edition
Issue:: Volume 58:Issue 27(2019)
Page Start:: 9109
Record Type:: Journal Article
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6. Theoretical investigation of vacancy related defects at 4H-SiC(0001̅)/SiO2 interface after wet oxidation. (1st July 2022)

Authors:: Tsunasaki, Mukai; Ono, Tomoya; Uemoto, Mitsuharu
Journal:: Japanese journal of applied physics
Issue:: Volume 61:Number SH(2022)
Page Start:
Record Type:: Journal Article
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