1. Alternately double‐sided growth of low‐curvature GaN templates on sapphire substrates using hydride vapor phase epitaxy. Issue 5 (4th March 2016) Authors: Okada, Narihito; Ihara, Hiroshi; Yamane, Keisuke; Tadatomo, Kazuyuki Journal: Physica status solidi Issue: Volume 253:Issue 5(2016) Page Start: 819 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Analysis of efficiency curves in near-UV, blue, and green-emitting InGaN-based multiple quantum wells using rate equations of exciton recombination. (12th April 2019) Authors: Murotani, Hideaki; Shibuya, Kazunori; Yoneda, Ayumu; Hashiguchi, Yuki; Miyoshi, Hiroyuki; Kurai, Satoshi; Okada, Narihito; Tadatomo, Kazuyuki; Yano, Yoshiki; Tabuchi, Toshiya; Matsumoto, Koh; Yamada, Yoichi Journal: Japanese journal of applied physics Issue: Volume 58:Number SC(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Anisotropic radius of curvature of crystal planes in wide-bandgap semiconductor wafers measured by X-ray diffraction. (2nd December 2021) Authors: Yao, Yongzhao; Sugawara, Yoshihiro; Yokoe, Daisaku; Hirano, Keiichi; Okada, Narihito; Tadatomo, Kazuyuki; Sasaki, Kohei; Kuramata, Akito; Ishikawa, Yukari Journal: Japanese journal of applied physics Issue: Volume 60:Number 12(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Characterization of semipolar {11$ \bar 2 $2} light‐emitting diodes using a hole blocking layer. Issue 3 (17th February 2014) Authors: Nakao, Kota; Haziq, Muhammad; Okamura, Yasumasa; Yamane, Keisuke; Okada, Narihito; Tadatomo, Kazuyuki Other Names: Eddy, Jr. Charles R. "Chip" sponsoringEditor.; Kuball Martin sponsoringEditor.; Koleske Daniel D. sponsoringEditor.; Amano Hiroshi sponsoringEditor. Journal: Physica status solidi Issue: Volume 11:Issue 3/4(2014:Apr.) Page Start: 775 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Correlation between structural properties and nonradiative recombination behaviors of threading dislocations in freestanding GaN substrates grown by hydride vapor phase epitaxy. Issue 48 (10th November 2020) Authors: Yao, Yongzhao; Sugawara, Yoshihiro; Yokoe, Daisaku; Sato, Koji; Ishikawa, Yukari; Okada, Narihito; Tadatomo, Kazuyuki; Sudo, Masaki; Kato, Masashi; Miyoshi, Makoto; Egawa, Takashi Journal: CrystEngComm Issue: Volume 22:Issue 48(2020) Page Start: 8299 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Crystalline property analysis of semipolar (20–21) GaN on (22–43) patterned sapphire substrate by X‐ray microdiffraction and transmission electron microscopy. Issue 5 (4th February 2015) Authors: Arauchi, Takuji; Takeuchi, Shotaro; Hashimoto, Yasuhiro; Nakamura, Yoshiaki; Yamane, Keisuke; Okada, Narihito; Imai, Yasuhiko; Kimura, Shigeru; Tadatomo, Kazuyuki; Sakai, Akira Journal: Physica status solidi Issue: Volume 252:Issue 5(2015:May) Page Start: 1149 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Deep ultraviolet emission from multiple quantum wells on flat N-polar AlN templates fabricated using periodical pulsed H2 etching. (10th November 2021) Authors: Okada, Narihito; Sakamoto, Ryota; Ataka, Kazuya; Ito, Tadatoshi; Matsumura, Wataru; You, Lu; Yao, Yongzhao; Ishikawa, Yukari; Tadatomo, Kazuyuki Journal: Japanese journal of applied physics Issue: Volume 60:Number 12(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Direct growth of GaN on sapphire substrate via polarity transition from N- to Ga-polar using only hydride vapor phase epitaxy. (15th December 2021) Authors: Misaku, Ryusei; Tanigawa, Shunsuke; Okada, Narihito; Tadatomo, Kazuyuki Journal: Japanese journal of applied physics Issue: Volume 61:Number SA(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Effect of InGaN/GaN Superlattice on Lattice Curvature of GaN Layers Grown on Sapphire Substrates. Issue 4 (12th March 2020) Authors: Kaneko, Takushi; Okada, Narihito; Tadatomo, Kazuyuki Other Names: Shadi Shahedipour-Sandvik F. guestEditor.; Qhalid Fareed guestEditor. Journal: Physica status solidi Issue: Volume 257:Issue 4(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Effect of superlattice on light output power of InGaN‐based light‐emitting diodes fabricated on underlying GaN substrates with different dislocation densities. Issue 5 (29th March 2016) Authors: Sugimoto, Kohei; Denpo, Yusho; Okada, Narihito; Tadatomo, Kazuyuki Other Names: Zhang Guoyi sponsoringEditor.; Yu Tongjun sponsoringEditor.; Tang Ning sponsoringEditor.; Yang Xuelin sponsoringEditor.; Li Shunfeng sponsoringEditor. Journal: Physica status solidi Issue: Volume 13:Issue 5/6(2016:May) Page Start: 270 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗